Biblio

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J. C. C. Tsai, “Shallow phosphorus diffusion profiles in silicon”, Proceedings of the IEEE, vol. 57, no. 9, pp. 1499 - 1506, 1969.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
B. Thomas, Ellmer, K., Bohne, W., Röhrich, J., Kunst, M., and Tributsch, H., “Photoeffects in cobalt doped pyrite (FeS 2 ) films”, Solid State Communications, vol. 111, no. 5, pp. 235 - 240, 1999.
J. -ichi Tani and Kido, H., “Thermoelectric properties of Bi-doped Mg2Si semiconductors”, Physica B: Condensed Matter, vol. 364, no. 1-4, pp. 218 - 224, 2005.
E. P. S. Tan et al., “Crystallinity and surface effects on Young’s modulus of CuO nanowires”, Applied Physics Letters, vol. 90, no. 16, p. 163112, 2007.
T. Takamoto et al., “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.