Submitted by stuart on Tue, 03/12/2019 - 10:17 J. Brody и Rohatgi, A., «Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon», Solid-State Electronics, т. 45, № 9, с. 1549 - 1557, 2001. Log in or register to post comments DOI BibTeX RTF Tagged MARC EndNote XML RIS