@article {Sproul1991,
	title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K},
	journal = {Journal of Applied Physics},
	volume = {70},
	number = {2},
	year = {1991},
	note = {<br />},
	pages = {846-854},
	publisher = {AIP},
	keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE},
	doi = {10.1063/1.349645},
	url = {http://link.aip.org/link/?JAP/70/846/1},
	author = {A. B. Sproul and Martin A Green}
}
