01175nas a2200133   4500008004100000245007900041210006900120260001600189300001400205490000700219520070000226100001700926856009800943       1949                        eng d00aThe theory of p-n Junctions in semiconductors and p-n junction transistors0 atheory of pn Junctions in semiconductors and pn junction transis  cJan-07-1949  a435 - 4890 v283 aIn a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p ) 1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.1 aShockley, W.  uhttp://doi.wiley.com/10.1002/bltj.1949.28.issue-3https://ieeexplore.ieee.org/document/6773080