01203nas a2200157   4500008004100000022001300041245008400054210006900138260001600207300000900223490000800232520071800240100001600958700002000974856005100994       1984                        eng d  a0013465100aOn the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon0 aEffect of Impurities on the Photovoltaic Behavior of SolarGrade   cJan-01-1984  a21280 v1313 aThe electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation. 1 aPizzini, S.1 aCalligarich, C.  uhttp://jes.ecsdl.org/cgi/doi/10.1149/1.2116033