00237nas a2200085 4500008004100000245002900041210002500070100003000095856002600125 2020 eng d00aThe Astronomical Almanac0 aAstronomical Almanac1 aObservatory, U., S. Naval uhttp://asa.hmnao.com/00572nas a2200169 4500008004100000245009400041210006900135300001400204490000600218100001700224700001800241700001500259700001500274700001300289700001700302856008300319 2019 eng d00aCd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35%0 aCdFree CuInGaSeSsub2sub ThinFilm Solar Cell With Record Efficien a1863-18670 v91 aNakamura, M.1 aYamaguchi, K.1 aKimoto, Y.1 aYasaki, Y.1 aKato, T.1 aSugimoto, H. uhttps://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors#authors00767nas a2200181 4500008004100000022001400041245010100055210006900156260001600225300001100241490000800252100002000260700003100280700002200311700002300333700002500356856020400381 2017 eng d a0021-897900aAnalysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset0 aAnalysis of the recombination mechanisms of a silicon solar cell cApr-05-2019 a2057040 v1211 aAugusto, André1 aHerasimenka, Stanislau, Y.1 aKing, Richard, R.1 aBowden, Stuart, G.1 aHonsberg, Christiana uhttp://aip.scitation.org/doi/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/am-pdf/10.1063/1.498407100803nas a2200241 4500008004100000245010500041210007100146300001400217490000700231100001900238700002200257700002100279700002100300700002500321700001700346700001900363700002400382700002200406700002500428700002300453700002400476856006100500 2017 eng d00aProgress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications0 aProgress in thin film CIGS photovoltaics–Research and developmen a645–6670 v251 aFeurer, Thomas1 aReinhard, Patrick1 aAvancini, Enrico1 aBissig, Benjamin1 aLöckinger, Johannes1 aFuchs, Peter1 aCarron, Romain1 aWeiss, Thomas, Paul1 aPerrenoud, Julian1 aStutterheim, Stephan1 aBuecheler, Stephan1 aTiwari, Ayodhya, N. uhttps://www.pveducation.org/reference/feurer2017progress00591nas a2200169 4500008004100000245010900041210006900150300001400219490000700233100002000240700001800260700002400278700001800302700001900320700002100339856006100360 2016 eng d00aEffects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6%0 aEffects of heavy alkali elements in Cu In Ga Sesub2sub solar cel a583–5860 v101 aJackson, Philip1 aWuerz, Roland1 aHariskos, Dimitrios1 aLotter, Erwin1 aWitte, Wolfram1 aPowalla, Michael uhttps://www.pveducation.org/reference/jackson2016effects00616nas a2200157 4500008004100000022001400041245012900055210006900184260001600253300001100269490000800280100002300288700002600311700002000337856010100357 2016 eng d a0021-897900aGeneralized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 40 aGeneralized quantum efficiency analysis for nonideal solar cells cJul-01-2016 a0145050 v1191 aHages, Charles, J.1 aCarter, Nathaniel, J.1 aAgrawal, Rakesh uhttp://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.493948701801nas a2200169 4500008004100000022001400041245010100055210006900156300001400225490001600239520122000255653002101475100002301496700002101519700002001540856007101560 2016 eng d a0927-024800aOptoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying0 aOptoelectronic and material properties of nanocrystalbased CZTSe a342 - 3480 v145, Part 33 aAbstract In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)2ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for \{ACZTSe\} (5%-Ag) absorbers relative to \{CZTSe\} absorbers with similar band gap. These initial results are promising for the Ag-alloyed \{ACZTSe\} material system as \{VOC\} limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain \{ACZTSe\} absorber formation is described followed by material and optoelectronic characterization. Additionally, \{RTP\} processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks.10aCharacterization1 aHages, Charles, J.1 aKoeper, Mark, J.1 aAgrawal, Rakesh uhttp://www.sciencedirect.com/science/article/pii/S092702481500550400856nas a2200205 4500008004100000245023400041210006900275260001600344300001200360490000600372100001600378700001500394700001800409700002000427700001900447700002100466700002100487700001800508856012400526 2016 eng d00aOver 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer0 aOver 9 Efficient Kesterite Cu sub2sub ZnSnS sub4sub Solar Cell F cJan-06-2016 a16000460 v61 aSun, Kaiwen1 aYan, Chang1 aLiu, Fangyang1 aHuang, Jialiang1 aZhou, Fangzhou1 aStride, John, A.1 aGreen, Martin, A1 aHao, Xiaojing uhttp://doi.wiley.com/10.1002/aenm.201600046https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Faenm.20160004600400nas a2200085 4500008004100000245013300041210006900174110001800243856005300261 2016 eng d00aTest Method for Determination of the Spectral Mismatch Parameter Between a Photovoltaic Device and a Photovoltaic Reference Cell0 aTest Method for Determination of the Spectral Mismatch Parameter1 aE44 Committee uhttp://www.astm.org/cgi-bin/resolver.cgi?E973-1600600nas a2200169 4500008004100000022001400041245016300055210006900218260001600287300001600303490000700319100001500326700001600341700001700357700001500374856004100389 2016 eng d a1463-907600aTrigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics0 aTrigonal Cu sub2sub IISnVI sub4sub II Ba Sr and VI S Se quaterna cJan-01-2016 a4828 - 48340 v181 aHong, Feng1 aLin, Wenjun1 aMeng, Weiwei1 aYan, Yanfa uhttp://xlink.rsc.org/?DOI=C5CP06977G01745nas a2200193 4500008004100000245008700041210006900128260001600197300001400213490000700227520102500234100001701259700001101276700001201287700001601299700001301315700001601328856020701344 2015 eng d00aDevelopment of high-performance multicrystalline silicon for photovoltaic industry0 aDevelopment of highperformance multicrystalline silicon for phot cJan-03-2015 a340 - 3510 v233 aThe low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so‐called high‐performance mc‐Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high‐performance mc‐Si. The key ideas behind this technology for defect control are discussed. With the high‐performance mc‐Si, we have achieved an average efficiency of near 17.8% and an open‐circuit voltage (Voc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low‐efficiency cells (<17%) were also very few. The power of the 60‐cell module using the high‐efficiency cells could reach 261 W as well. 1 aYang, Y., M.1 aYu, A.1 aHsu, B.1 aHsu, W., C.1 aYang, A.1 aLan, C., W. uhttp://doi.wiley.com/10.1002/pip.v23.3http://doi.wiley.com/10.1002/pip.2437https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2437https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpip.243700593nas a2200181 4500008004100000022001400041245010600055210006900161260001600230300001600246490000600262100001800268700001800286700002100304700002800325700001700353856004100370 2015 eng d a1754-569200aStrategic review of secondary phases, defects and defect-complexes in kesterite CZTS–Se solar cells0 aStrategic review of secondary phases defects and defectcomplexes cJan-01-2015 a3134 - 31590 v81 aKumar, Mukesh1 aDubey, Ashish1 aAdhikari, Nirmal1 aVenkatesan, Swaminathan1 aQiao, Qiquan uhttp://xlink.rsc.org/?DOI=C5EE02153G00610nas a2200169 4500008004100000245008100041210006900122490000600191100001400197700002100211700001700232700001900249700002300268700001200291700002000303856011700323 2014 eng d00aDevice characteristics of CZTSSe thin-film solar cells with 12.6% efficiency0 aDevice characteristics of CZTSSe thinfilm solar cells with 126 e0 v41 aWang, Wei1 aWinkler, Mark, T1 aGunawan, Oki1 aGokmen, Tayfun1 aTodorov, Teodor, K1 aZhu, Yu1 aMitzi, David, B uhttps://www.pveducation.org/reference/device-characteristics-of-cztsse-thin-film-solar-cells-with-126-efficiency00590nas a2200169 4500008004100000245009500041210006900136260000900205100002200214700002300236700002300259700001900282700002000301700002100321700001700342856006100359 2014 eng d00aRecent R&D progress in solar frontier's small-sized Cu (InGa)(SeS)2 solar cells0 aRecent RD progress in solar frontiers smallsized Cu InGaSeSsub2s bIEEE1 aNakamura, Motoshi1 aYoneyama, Nobutaka1 aHoriguchi, Kyouhei1 aIwata, Yasuaki1 aYamaguchi, Koji1 aSugimoto, Hiroki1 aKato, Takuya uhttps://www.pveducation.org/reference/nakamura2014recent01106nas a2200145 4500008004100000022001300041245003500054210003100089260001600120300001200136490000700148520071300155100002000868856007200888 2014 eng d a1876610200aThe Recombination Parameter J00 aRecombination Parameter J0 cJan-01-2014 a53 - 620 v553 aThe parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter.1 aCuevas, Andrés uhttp://www.sciencedirect.com/science/article/pii/S1876610214012971#00463nas a2200145 4500008004100000245006800041210006800109300001100177490000800188100001900196700001700215700002400232700002100256856004000277 2013 eng d00aBand tailing and efficiency limitation in kesterite solar cells0 aBand tailing and efficiency limitation in kesterite solar cells a1035060 v1031 aGokmen, Tayfun1 aGunawan, Oki1 aTodorov, Teodor, K.1 aMitzi, David, B. uhttp://dx.doi.org/10.1063/1.482025000566nas a2200181 4500008004100000245006200041210005300103300001200156490000800168100002100176700002000197700001900217700002400236700001900260700002300279700002400302856005800326 2013 eng d00aHigh-efficiency Cu(In,Ga)Se2 cells and modules0 aHighefficiency CuInGaSesub2sub cells and modules a51–580 v1191 aPowalla, Michael1 aJackson, Philip1 aWitte, Wolfram1 aHariskos, Dimitrios1 aPaetel, Stefan1 aTschamber, Carsten1 aWischmann, Wiltraud uhttps://www.pveducation.org/reference/powalla2013high00571nas a2200157 4500008004100000245010800041210006900149300001600218490000600234100002200240700002200262700003300284700002000317700001800337856005800355 2013 eng d00aThe Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers0 aInfluence of Absorber Thickness on CuInGaSesub2sub Solar Cells W a1376–13820 v31 aPettersson, Jonas1 aTörndahl, Tobias1 aPlatzer-Björkman, Charlotte1 aHultqvist, Adam1 aEdoff, Marika uhttps://ieeexplore.ieee.org/abstract/document/657966000393nas a2200109 4500008004100000245005000041210004400091260003600135300000800171100002400179856008000203 2013 eng d00aMinerals Yearbook, Vol. I, Metals & Minerals:0 aMinerals Yearbook Vol I Metals Minerals bU.S. Government Printing Office a1441 aCorathers, Lisa, A. uhttp://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf00500nas a2200121 4500008004100000245008100041210006900122260004100191100001900232700001700251700002500268856008500293 2013 eng d00aSPIE ProceedingsNon PN junction solar cells using carrier selective contacts0 aSPIE ProceedingsNon PN junction solar cells using carrier select aSan Francisco, California, USAbSPIE1 aBowden, Stuart1 aGhosh, Kunal1 aHonsberg, Christiana uhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.200425900467nas a2200157 4500008004100000245005000041210004100091260002700132300000800159100001200167700001700179700002100196700001800217700001600235856005800251 2012 eng d00aCu(In,Ga)Se2 Thin-Film Solar Cells0 aCuInGaSesub2sub ThinFilm Solar Cells aLondonbAcademic Press a2621 aRau, U.1 aSchock, H.W.1 aMcEvoy, Augustin1 aMarkvart, Tom1 aCastaner, L uhttps://www.pveducation.org/reference/mcevoy2012solar00526nas a2200157 4500008004100000022001400041245008500055210006900140260001600209300001000225490002200235100001700257700002100274700002000295856005300315 2012 eng d a1687-411000aFacile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications0 aFacile Synthesis of Colloidal CuO Nanocrystals for LightHarvesti cJan-01-2012 a1 - 60 v201233128259102871 aLim, Yee-Fun1 aChoi, Joshua, J.1 aHanrath, Tobias uhttp://www.hindawi.com/journals/jnm/2012/393160/02039nas a2200169 4500008004100000022001400041245005400055210005300109260001600162300001800178490000800196520156000204100002101764700001901785700002401804856004101828 2012 eng d a0027-842400aFrom the Cover: Anomalously weak solar convection0 aFrom the Cover Anomalously weak solar convection cDec-07-2013 a11928 - 119320 v1093 aConvection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. 1 aHanasoge, S., M.1 aDuvall, T., L.1 aSreenivasan, K., R. uhttps://www.pveducation.org/node/52801809nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004101586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/node/52500496nas a2200157 4500008004100000022001400041245006700055210006600122260001600188300001400204490000600218100002800224700002400252700002100276856004100297 2012 eng d a2156-338100aIsotextured Silicon Solar Cell Analysis and Modeling 1: Optics0 aIsotextured Silicon Solar Cell Analysis and Modeling 1 Optics cJan-10-2012 a457 - 4640 v21 aBaker-Finch, Simeon, C.1 aMcIntosh, Keith, R.1 aTerry, Mason, L. uhttps://www.pveducation.org/node/53300623nas a2200169 4500008004100000022001400041245008400055210006900139260001600208300000800224490000800232100001500240700001700255700001700272700001900289856014500308 2012 eng d a0004-637X00aMEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS0 aMEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 M cOct-05-2012 a1350 v7501 aEmilio, M.1 aKuhn, J., R.1 aBush, R., I.1 aScholl, I., F. uhttp://stacks.iop.org/0004-637X/750/i=2/a=135?key=crossref.05e0b42eda734799131016b454577c66http://stacks.iop.org/0004-637X/750/i=2/a=135/pdf00338nas a2200109 4500008004100000245002700041210002700068260003700095490000900132100003700141856005000178 2012 eng d00aMeasuring the Universe0 aMeasuring the Universe bInternational Astronomical Union0 v20181 aUnion, International, Astronomic uhttps://www.pveducation.org/reference/iau201201324nas a2200133 4500008004100000020002200041245006000063210005900123260002600182520088900208100002401097700002801121856004101149 2012 eng d a978-1-4673-0064-300aOPAL 2: Rapid optical simulation of silicon solar cells0 aOPAL 2 Rapid optical simulation of silicon solar cells aAustin, TX, USAbIEEE3 aThe freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.1 aMcIntosh, Keith, R.1 aBaker-Finch, Simeon, C. uhttps://www.pveducation.org/node/53200314nas a2200097 4500008004100000245005400041210005400095100001400149700001400163856003900177 2012 eng d00aSynthesis and Purification of Bulk Semiconductors0 aSynthesis and Purification of Bulk Semiconductors1 aSmith, C.1 aBarron, A uhttp://cnx.org/content/m23936/1.7/00638nas a2200181 4500008004100000022001400041245010500055210006900160260001600229300001400245490000800259100002200267700001800289700002000307700002000327700001400347856009500361 2011 eng d a0002-786300aColloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics0 aColloidal Iron Pyrite FeS sub2sub Nanocrystal Inks for ThinFilm cFeb-02-2011 a716 - 7190 v1331 aPuthussery, James1 aSeefeld, Sean1 aBerry, Nicholas1 aGibbs, Markelle1 aLaw, Matt uhttp://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja109636800485nas a2200169 4500008004100000245003900041210003200080250000600112260002200118300001200140100002300152700002500175700001600200700001900216700002000235856006000255 2011 eng d00aCu(InGa)Se2 Solar Cells0 aCuInGaSesub2sub Solar Cells a2 bJohn Wiley & Sons a546-5991 aShafarman, William1 aSieventritt, Susanne1 aStolt, Lars1 aLuque, Antonio1 aHegedus, Steven uhttps://www.pveducation.org/reference/luque2011handbook00552nas a2200169 4500008004100000022001300041245009000054210006900144260001600213300001100229490000700240100001800247700001700265700002300282700001400305856006300319 2011 eng d a0003695100aEffects of electrical contacts on the photoconductive gain of nanowire photodetectors0 aEffects of electrical contacts on the photoconductive gain of na cJan-01-2011 a1431100 v991 aPark, Hongsik1 aKim, Jin, Ho1 aBeresford, Roderic1 aXu, Jimmy uhttp://link.aip.org/link/APPLAB/v99/i14/p143110/s1&Agg=doi00659nas a2200217 4500008004100000022001300041245009100054210006900145260001600214300001100230490000800241100001300249700001400262700001700276700001700293700001600310700001700326700001700343700001800360856006300378 2011 eng d a0021897900aElectronic structure of TiS2 and its electric transport properties under high pressure0 aElectronic structure of TiS2 and its electric transport properti cJan-01-2011 a0537170 v1091 aLiu, Bao1 aYang, Jie1 aHan, Yonghao1 aHu, Tingjing1 aRen, Wanbin1 aLiu, Cailong1 aMa, Yanzhang1 aGao, Chunxiao uhttp://link.aip.org/link/JAPIAU/v109/i5/p053717/s1&Agg=doi00501nas a2200169 4500008004100000022001300041245005700054210005700111260001600168300001400184490000800198100001400206700001500220700001600235700001400251856006600265 2011 eng d a0921452600aExtraction of important electrical parameters of CuO0 aExtraction of important electrical parameters of CuO cJan-02-2011 a575 - 5780 v4061 aSerin, T.1 aYildiz, A.1 aŞahin, Ş.1 aSerin, N. uhttp://linkinghub.elsevier.com/retrieve/pii/S092145261001099900572nas a2200181 4500008004100000022001400041245006200055210006100117260001600178490000600194100002100200700001500221700002200236700002000258700002800278700001500306856006900321 2011 eng d a1927-058500aFabrication and Characterization of CuO-based Solar Cells0 aFabrication and Characterization of CuObased Solar Cells cMay-12-20130 v11 aKIDOWAKI, Hiroki1 aOKU, Takeo1 aAkiyama, Tsuyoshi1 aSUZUKI, Atsushi1 aJEYADEVAN, Balachandran1 aCuya, Jhon uhttp://www.ccsenet.org/journal/index.php/jmsr/article/view/1400202886nas a2200181 4500008004100000245008100041210006900122260002900191520231200220653002902532653002302561653001602584653001802600653001802618653001002636100001702646856004102663 2011 eng d00aHeterojunction and Nanostructured Photovoltaic Device: Theory and Experiment0 aHeterojunction and Nanostructured Photovoltaic Device Theory and bArizona State University3 aA primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 %). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.10aa-Si/c-Si heterojunction10aAlternative energy10aEngineering10aNanostructure10aPhotovoltaics10aSolar1 aGhosh, Kunal uhttp://hdl.handle.net/2286/R.I.1431202563nas a2200193 4500008004100000022001400041245008000055210006900135300001600204490000700220520195000227653002402177100002102201700001702222700002402239700001602263700001902279856007102298 2011 eng d a0927-024800aThe path towards a high-performance solution-processed kesterite solar cell0 apath towards a highperformance solutionprocessed kesterite solar a1421 - 14360 v953 aDespite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth's crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., >10% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.10aSolution processing1 aMitzi, David, B.1 aGunawan, Oki1 aTodorov, Teodor, K.1 aWang, Kejia1 aGuha, Supratik uhttp://www.sciencedirect.com/science/article/pii/S092702481000671900386nas a2200097 4500008004100000020002200041245008000063210006900143260002000212856005600232 2011 eng d a978 0 86214 573 600aSilicon and Ferrosilicon: Global Industry Markets and Outlook, 13th edition0 aSilicon and Ferrosilicon Global Industry Markets and Outlook 13t aLondonbRoskill uhttp://www.roskill.com/reports/steel-alloys/silicon00585nas a2200157 4500008004100000022001400041245009900055210006900154260001600223300001400239490000700253100001800260700001500278700001600293856011800309 2011 eng d a0361-523500aA Theoretical Search for Efficient Dopants in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials0 aTheoretical Search for Efficient Dopants in Mg2X X Si Ge Sn Ther cJan-05-2011 a889 - 8970 v401 aZwolenski, P.1 aTobola, J.1 aKaprzyk, S. uhttp://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y00582nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004100347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/node/29700258nas a2200085 4500008004100000245003800041210003800079100000900117856004600126 2010 eng d00aGISS Surface Temperature Analysis0 aGISS Surface Temperature Analysis1 aNASA uhttp://data.giss.nasa.gov/gistemp/graphs/00610nas a2200193 4500008004100000022001400041245009000055210007100145260001600216300000900232490000700241100002400248700002000272700002000292700002800312700001700340700002000357856003900377 2010 eng d a1463-926200aGreen synthesis of tunable Cu(In1−xGax)Se2 nanoparticles using non-organic solvents0 aGreen synthesis of tunable CuIn1−xGaxSe2 nanoparticles using non cJan-01-2010 a12480 v121 aJuhaiman, Layla, Al1 aScoles, Ludmila1 aKingston, David1 aPatarachao, Bussaraporn1 aWang, Dashan1 aBensebaa, Farid uhttp://xlink.rsc.org/?DOI=c001813a00513nas a2200145 4500008004100000245006200041210006200103300001200165490000600177100001600183700002300199700002200222700002300244856010000267 2010 eng d00aOptical properties of copper indium diselenide thin films0 aOptical properties of copper indium diselenide thin films a49–580 v71 aPrabahar, S1 aBalasubramanian, V1 aSuryanarayanan, N1 aMuthukumarasamy, N uhttps://www.pveducation.org/reference/optical-properties-of-copper-indium-diselenide-thin-films00448nas a2200133 4500008004100000020002200041245003000063210003000093250001900123260001900142300000800161100002300169856012200192 2010 eng d a978-0-12-374774-700aSolar Cell Device Physics0 aSolar Cell Device Physics aSecond Edition bAcademic Press a4001 aFonash, Stephen, J uhttp://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-100929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
10aConversion efficiency10aEnergy conversion10asolar cells10aSolar energy10aSolar power generation1 aGreen, Martin, A1 aEmery, Keith1 aHishikawa, Yoshihiro1 aWarta, Wilhelm uhttp://dx.doi.org/10.1002/pip.97400595nas a2200169 4500008004100000022001300041245009900054210006900153260001600222300001600238490000800254100002500262700003300287700002000320700001900340856006600359 2010 eng d a0921452600aSonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles0 aSonochemical synthesis characterization and thermal and optical cJan-08-2010 a3096 - 31000 v4051 aRanjbar-Karimi, Reza1 aBazmandegan-Shamili, Alireza1 aAslani, Alireza1 aKaviani, Karim uhttp://linkinghub.elsevier.com/retrieve/pii/S092145261000383200671nas a2200205 4500008004100000022001400041245008400055210006900139260001600208300001600224490000800240100002300248700001500271700002100286700002000307700001900327700002000346700002800366856007100394 2010 eng d a1882-074300aStructure and photovoltaic activity of cupric oxide-based thin film solar cells0 aStructure and photovoltaic activity of cupric oxidebased thin fi cJan-01-2010 a1021 - 10230 v1181 aMOTOYOSHI, Ryosuke1 aOKU, Takeo1 aKIDOWAKI, Hiroki1 aSUZUKI, Atsushi1 aKIKUCHI, Kenji1 aKIKUCHI, Shiomi1 aJEYADEVAN, Balachandran uhttp://joi.jlc.jst.go.jp/JST.JSTAGE/jcersj2/118.1021?from=CrossRef00466nas a2200133 4500008004100000022001300041245008400054210006900138260001600207300001600223490000700239100002000246856006600266 2010 eng d a0927024800aTowards solar grade silicon: Challenges and benefits for low cost photovoltaics0 aTowards solar grade silicon Challenges and benefits for low cost cJan-09-2010 a1528 - 15330 v941 aPizzini, Sergio uhttp://linkinghub.elsevier.com/retrieve/pii/S092702481000031000687nas a2200229 4500008004100000245010800041210006900149260002100218100001600239700001200255700001500267700001500282700001200297700001400309700001600323700001700339700001400356700001400370700001500384700001700399856004100416 2010 eng d00aWorld’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process0 aWorld s Highest Efficiency Triplejunction Solar Cells Fabricated aHonolulu HI, USA1 aTakamoto, T1 aAgui, T1 aYoshida, A1 aNakaido, K1 aJuso, H1 aSasaki, K1 aNakamura, K1 aYamaguchi, H1 aKodama, T1 aWashio, H1 aImazumi, M1 aTakahashi, M uhttps://www.pveducation.org/node/39500575nas a2200169 4500008004100000022001300041245008700054210006900141260001600210300001600226490000800242100002200250700002000272700002800292700001900320856006600339 2009 eng d a0040609000aCopper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells0 aCopper oxide thin film and nanowire as a barrier in ZnO dyesensi cJan-07-2009 a4741 - 47440 v5171 aRaksa, Phathaitep1 aNilphai, Sanpet1 aGardchareon, Atcharawon1 aChoopun, Supab uhttp://linkinghub.elsevier.com/retrieve/pii/S004060900900479900588nas a2200145 4500008004100000245011900041210006900160300001000229490000700239100001700246700001300263700001600276700001700292856013300309 2009 eng d00aCrystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights0 aCrystal and electronic band structure of Cu2ZnSnX4 X S and Se ph a419030 v941 aChen, Shiyou1 aGong, XG1 aWalsh, Aron1 aWei, Su-Huai uhttps://www.pveducation.org/reference/crystal-and-electronic-band-structure-of-cu2znsnx4-x-s-and-se-photovoltaic-absorbers-first00579nas a2200181 4500008004100000245005200041210005100093300001600144490000800160100002300168700001700191700001900208700002000227700002100247700001900268700002000287856009000307 2009 eng d00aDevelopment of CZTS-based thin film solar cells0 aDevelopment of CZTSbased thin film solar cells a2455–24600 v5171 aKatagiri, Hironori1 aJimbo, Kazuo1 aMaw, Win, Shwe1 aOishi, Koichiro1 aYamazaki, Makoto1 aAraki, Hideaki1 aTakeuchi, Akiko uhttps://www.pveducation.org/reference/development-of-czts-based-thin-film-solar-cells00574nas a2200193 4500008004100000245008300041210006900124100001500193700001300208700001500221700001400236700001500250700001300265700001500278700001400293700001800307700001400325856004100339 2009 eng d00aMETAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY0 aMETAMORPHIC GaInPGaInAsGe TRIPLEJUNCTION SOLAR CELLS WITH 41 EFF1 aDimroth, F1 aGuter, W1 aSchöne, J1 aWelser, E1 aSteiner, M1 aOliva, E1 aWekkeli, A1 aSiefer, G1 aPhilipps, S P1 aBett, A W uhttps://www.pveducation.org/node/30100386nas a2200109 4500008004100000245008500041210006900126300001200195490000700207100002100214856004100235 2009 eng d00aThe path to 25% silicon solar cell efficiency: History of silicon cell evolution0 apath to 25 silicon solar cell efficiency History of silicon cell a183-1890 v171 aGreen, Martin, A uhttps://www.pveducation.org/node/31700432nas a2200133 4500008004100000020002200041245002700063210002700090250003800117260003600155300000800191100001900199856008000218 2009 eng d a978-3-527-40857-300aPhysics of Solar Cells0 aPhysics of Solar Cells a2nd, updated and expanded edition aMörlenbach, GermanybWiley-VCH a1831 aWürfel, Peter uhttp://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/352740428700820nas a2200193 4500008004100000022001300041245010200054210006900156260001600225300001600241490000800257100002600265700001700291700002300308700002300331700002400354700001800378856023000396 2009 eng d a0040609000aStructural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis0 aStructural optical and electrical properties of tin sulfide thin cJan-02-2009 a2497 - 24990 v5171 aCalixto-Rodriguez, M.1 aMartinez, H.1 aSanchez-Juarez, A.1 aCampos-Alvarez, J.1 aTiburcio-Silver, A.1 aCalixto, M.E. uhttp://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain00523nas a2200157 4500008004100000020002200041245005700063210005600120260003200176100001500208700001900223700001700242700001500259700001700274856007400291 2009 eng d a978-1-4244-2949-300aStudy of SnS:Bi thin films prepared by sulfurization0 aStudy of SnSBi thin films prepared by sulfurization aPhiladelphia, PA, USAbIEEE1 aBotero, M.1 aPerez, Bartolo1 aCalderon, C.1 aRomero, E.1 aGordillo, G. uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=541115400673nas a2200193 4500008004100000022001400041245011400055210006900169260001600238300001600254490000700270100001700277700001200294700001600306700002400322700001700346700002100363856009500384 2009 eng d a0897-475600aSurfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals0 aSurfactantAssisted Hydrothermal Synthesis of Single phase Pyrite cFeb-07-2010 a2568 - 25700 v211 aWadia, Cyrus1 aWu, Yue1 aGul, Sheraz1 aVolkman, Steven, K.1 aGuo, Jinghua1 aAlivisatos, Paul uhttp://pubs.acs.org/doi/abs/10.1021/cm901273vhttp://pubs.acs.org/doi/pdf/10.1021/cm901273v00615nas a2200169 4500008004100000245007400041210006900115300001800184490000800202100002100210700002500231700001900256700002200275700001500297700002100312856011200333 2009 eng d00aSynthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics0 aSynthesis of Cu2ZnSnS4 nanocrystals for use in lowcost photovolt a12554–125550 v1311 aSteinhagen, Chet1 aPanthani, Matthew, G1 aAkhavan, Vahid1 aGoodfellow, Brian1 aKoo, Bonil1 aKorgel, Brian, A uhttps://www.pveducation.org/reference/synthesis-of-cu2znsns4-nanocrystals-for-use-in-low-cost-photovoltaics00571nas a2200157 4500008004100000022001400041245009300055210006900148260001600217300001800233490000800251100001500259700002400274700002000298856009500318 2009 eng d a0002-786300aSynthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells0 aSynthesis of Cusub2subZnSnSsub4sub Nanocrystal Ink and Its Use f cFeb-08-2011 a11672 - 116730 v1311 aGuo, Qijie1 aHillhouse, Hugh, W.1 aAgrawal, Rakesh uhttp://pubs.acs.org/doi/abs/10.1021/ja904981rhttp://pubs.acs.org/doi/pdf/10.1021/ja904981r00243nas a2200085 4500008004100000245002600041210002600067100001800093856004600111 2009 eng d00aTenorite Mineral Data0 aTenorite Mineral Data1 aBarthelmy, D. uhttp://webmineral.com/data/Tenorite.shtml02010nas a2200145 4500008004100000245010900041210006900150300001400219490000700233520152700240100001701767700001401784700002801798856003801826 2008 eng d00aAnalysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method0 aAnalysis of tandem solar cell efficiencies under AM15G spectrum a225–2330 v163 aWe report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
1 aBremner, S P1 aLevy, M Y1 aHonsberg, Christiana, B uhttp://dx.doi.org/10.1002/pip.79900609nas a2200169 4500008004100000022001300041245008900054210006900143260001600212300000800228490000800236100002000244700002200264700001700286700002300303856011300326 2008 eng d a0013465100aElectrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni0 aElectrochemical Impedance Spectroscopy of Synthetic Pyrite Doped cJan-01-2008 aP610 v1551 aLehner, Stephen1 aCiobanu, Madalina1 aSavage, Kaye1 aCliffel, David, E. uhttp://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.288510301514nas a2200169 4500008004100000022001300041245010500054210006900159260001600228300000900244490000800253520097300261100002201234700002001256700001701276856005101293 2008 eng d a0013465100aPolymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition0 aPolymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhomb cJan-01-2008 aD5170 v1553 aPolycrystalline thin films (100–450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6×10−6 (Ωcm)−1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500°C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550°C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, ∼1 (Ωcm)−1 . Photovoltaic effect in different structures involving these films is presented. 1 aAvellaneda, David1 aNair, M., T. S.1 aNair, P., K. uhttp://jes.ecsdl.org/cgi/doi/10.1149/1.291719800728nas a2200133 4500008004100000022001300041245017300054210006900227260001600296300001400312490000700326100002800333856023300361 2008 eng d a0038092X00aREST2: High-performance solar radiation model for cloudless-sky irradiance, illuminance, and photosynthetically active radiation – Validation with a benchmark dataset0 aREST2 Highperformance solar radiation model for cloudlesssky irr cJan-03-2008 a272 - 2850 v821 aGueymard, Christian, A. uhttps://linkinghub.elsevier.com/retrieve/pii/S0038092X07000990https://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/plain01286nas a2200169 4500008004100000022001400041245010500055210006900160300001600229490000700245520069800252653002700950653002300977653002401000100002101024856007101045 2008 eng d a0927-024800aSelf-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients0 aSelfconsistent optical parameters of intrinsic silicon at 300 K a1305–13100 v923 aAn updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.10aAbsorption coefficient10aoptical properties10aSILICON SOLAR CELLS1 aGreen, Martin, A uhttp://www.sciencedirect.com/science/article/pii/S092702480800215800519nas a2200169 4500008004100000020001800041245002600059210002600085260002600111300000800137520001100145100001600156700002100172700001400193700001500207856012700222 2007 eng d a1-84407-401-300aApplied Photovoltaics0 aApplied Photovoltaics aLondon, UKbEarthscan a3173 aThis paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.
10aColor10ameasurement10aoptical properties10aThin films1 aHenrie, Justin1 aKellis, Spencer1 aSchultz, Stephen1 aHawkins, Aaron uhttp://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-146400641nas a2200133 4500008004100000022001300041245009400054210006900148260001600217300001400233490000700247100001200254856024100266 2004 eng d a0927024800aExact analytical solutions of the parameters of real solar cells using Lambert W-function0 aExact analytical solutions of the parameters of real solar cells cJun-02-2004 a269 - 2770 v811 aJain, A uhttps://linkinghub.elsevier.com/retrieve/pii/S0927024803002605https://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/plain00536nas a2200145 4500008004100000022001300041245013100054210006900185260001600254300001400270490000800284100001400292700001800306856006600324 2004 eng d a0169433200aInfluence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites0 aInfluence of air annealing on the structural optical and electri cJan-02-2004 a343 - 3510 v2231 aKale, R.B1 aLokhande, C.D uhttp://linkinghub.elsevier.com/retrieve/pii/S016943320301154101471nas a2200205 4500008004100000022001400041245008200055210007100137260001600208300001600224490000700240520084100247100001101088700001301099700001201112700001501124700001501139700001501154856009601169 2004 eng d a0953-898400aPressure-induced structural phase transition in the IV–VI semiconductor SnS0 aPressureinduced structural phase transition in the IV–VI semicon cFeb-06-2004 a3545 - 35540 v163 aThe structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch–Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) Å3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B'=5.5(2) for α-SnS and V0 = 160(1) Å, B0 = 86.0(5) GPa and B'=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone.1 aEhm, L1 aKnorr, K1 aDera, P1 aKrimmel, A1 aBouvier, P1 aMezouar, M uhttp://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea214100411nam a2200133 4500008004100000020002900041024001000070245003300080210003300113260002100146300000800167100001600175856008600191 2004 eng d a9783642188657 3642188656 ap 40000aSemiconductors Data Handbook0 aSemiconductors Data Handbook aBerlinbSpringer a6911 aMadelung, O uhttp://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/354040488000393nam a2200121 4500008004100000020002900041245003300070210003300103260002100136300001200157100001600169856008600185 2004 eng d a9783642188657 364218865600aSemiconductors Data Handbook0 aSemiconductors Data Handbook aBerlinbSpringer a815-8351 aMadelung, O uhttp://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/354040488000359nas a2200109 4500008004100000245005700041210005300098490000700151100001800158700002100176856005200197 2003 eng d00aThe American Mineralogist Crystal Structure Database0 aAmerican Mineralogist Crystal Structure Database0 v881 aDowns, R., T.1 aHall-Wallace, M. uhttps://www.pveducation.org/reference/downs200300217nas a2200085 4500008004100000245001700041210001700058100001700075856003900092 2003 eng d00aBismuthinite0 aBismuthinite1 aRalph, J., R uhttp://www.mindat.org/min-686.html00451nas a2200133 4500008004100000245007300041210006900114100002800183700001500211700001800226700001600244700001600260856004100276 2003 eng d00aDependence of aluminium alloying on solar cell processing conditions0 aDependence of aluminium alloying on solar cell processing condit1 aHonsberg, Christiana, B1 aAnwar, K K1 aMehrvarz, H R1 aCotter, J E1 aWenham, S R uhttps://www.pveducation.org/node/33000544nas a2200169 4500008004100000245009900041210006900140300001200209490000800221100001500229700001400244700001400258700001400272700001200286700001500298856006100313 2003 eng d00aEffects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films0 aEffects of NaF coevaporation on structural properties of Cu In G a37–400 v4311 aRudmann, D1 aBilger, G1 aKaelin, M1 aHaug, F-J1 aZogg, H1 aTiwari, AN uhttps://www.pveducation.org/reference/rudmann2003effects00516nas a2200157 4500008004100000022001300041245007500054210006900129260001600198300001400214490000800228100001500236700001900251700002200270856006600292 2003 eng d a0925838800aElectronic structures of semiconducting alkaline-earth metal silicides0 aElectronic structures of semiconducting alkalineearth metal sili cJan-08-2003 a257 - 2630 v3581 aImai, Yoji1 aWatanabe, Akio1 aMukaida, Masakazu uhttp://linkinghub.elsevier.com/retrieve/pii/S092583880300037900489nas a2200133 4500008004100000020001800041245005300059210005300112260004800165300000900213100001300222700001500235856010500250 2003 eng d a0-471-49196-900aHandbook of Photovoltaic Science and Engineering0 aHandbook of Photovoltaic Science and Engineering aChichester, EnglandbJohn Wiley & Sons Ltd. a11171 aLuque, A1 aHegedus, S uhttp://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_700416nas a2200133 4500008004100000020001800041245003100059210002700090260003900117300000800156520001100164100001800175856008900193 2003 eng d a1-86094-340-300aThe Physics of Solar Cells0 aPhysics of Solar Cells aLondon, UKbImperial College Press a3553 aWe numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100361nas a2200109 4500008004100000245005700041210005600098260002000154100001300174700002300187856004100210 2001 eng d00aNatural Sunlight Calibration of Silicon Solar Cells.0 aNatural Sunlight Calibration of Silicon Solar Cells aMunich, Germany1 aKeogh, W1 aBlakers, Andrew, W uhttps://www.pveducation.org/node/33600436nas a2200121 4500008004100000245009300041210006900134300001000203100002800213700001500241700001700256856004100273 2001 eng d00aA New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits0 aNew Generalized Detailed Balance Formulation to Calculate Solar a22-261 aHonsberg, Christiana, B1 aCorkish, R1 aBremner, S P uhttps://www.pveducation.org/node/32900437nas a2200109 4500008004100000245011500041210006900156260003200225100001400257700001500271856004100286 2001 eng d00aRapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells0 aRapid and Accurate Determination of Series Resistance and Fill F aMunich, Germanyc22/10/20011 aBowden, S1 aRohatgi, A uhttps://www.pveducation.org/node/28800809nas a2200253 4500008004100000245012200041210006900163260000800232300001400240490000700254653002000261653002100281653001900302653003200321653002900353653001500382653002200397653001200419653001600431100002200447700002200469700002000491856004400511 2001 eng d00aOn the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon0 ause of a biaslight correction for trapping effects in photocondu bAIP a2772-27780 v8910aCARRIER DENSITY10acarrier lifetime10aelectron traps10aelectron-hole recombination10aelemental semiconductors10ahole traps10aphotoconductivity10aSILICON10asolar cells1 aMacdonald, Daniel1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?JAP/89/2772/100395nas a2200109 4500008004100000245006300041210006300104260003400167490002800201100001500229856004100244 2000 eng d00aAluminium Back Surface Field in Buried Contact Solar Cells0 aAluminium Back Surface Field in Buried Contact Solar Cells bUniversity of New South Wales0 vBachelor of Engineering1 aAnwar, K K uhttps://www.pveducation.org/node/27500703nas a2200217 4500008004100000245010900041210006900150260000800219300001400227490000700241653001700248653002100265653003200286653002900318653002200347653001200369100001700381700001800398700002500416856004400441 2000 eng d00aCoulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities0 aCoulombenhanced Auger recombination in crystalline silicon at in bAIP a1494-14970 v8810aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aphotoconductivity10aSILICON1 aSchmidt, Jan1 aKerr, Mark, J1 aAltermatt, Pietro, P uhttp://link.aip.org/link/?JAP/88/1494/100358nas a2200097 4500008004100000245006900041210006300110100001800173700002800191856004100219 2000 eng d00aThe Influence of Edge Recombination on a Solar Cell’s IV Curve0 aInfluence of Edge Recombination on a Solar Cell s IV Curve1 aMcIntosh, K R1 aHonsberg, Christiana, B uhttps://www.pveducation.org/node/35100472nas a2200121 4500008004100000245013700041210006900178260002900247300000900276100001700285700000700302856004100309 2000 eng d00aMapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques0 aMapping of contact resistance and locating shunts on solar cells aGlasgow (United Kingdom) a14381 aHeide, A S H1 aal uhttps://www.pveducation.org/node/32600385nas a2200109 4500008004100000245007300041210006900114260001600183100001800199700001700217856004100234 2000 eng d00aOutdoor measurement of 28% efficiency for a mini-concentrator module0 aOutdoor measurement of 28 efficiency for a miniconcentrator modu aDenver, USA1 aO’Neil, M J1 aMcDanal, A J uhttps://www.pveducation.org/node/36001407nas a2200169 4500008004100000022001400041245009100055210006900146300001400215490000800229520086200237653000801099100001901107700001901126700002101145856007101166 2000 eng d a0040-609000aPhotoelectrochemical properties of copper oxide thin films coated on an n-Si substrate0 aPhotoelectrochemical properties of copper oxide thin films coate a250 - 2560 v3723 aThe photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.10aXPS1 aYoon, Ki, Hyun1 aChoi, Woo, Jin1 aKang, Dong, Heon uhttp://www.sciencedirect.com/science/article/pii/S004060900001058000441nas a2200121 4500008004100000245008500041210006900126260003100195300001600226100001600242700002000258856004100278 2000 eng d00aA Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization0 aQuasiSteadyState OpenCircuit Voltage Method for Solar Cell Chara aGlasgow, Scotlandc05/2000 a1152–11551 aSinton, R A1 aCuevas, Andrés uhttps://www.pveducation.org/node/38500442nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004100267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/node/29500530nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004100331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/node/29600453nas a2200133 4500008004100000020001800041245002200059210002200081250001900103260004300122300000800165100002000173856012600193 2000 eng d a0-471-98853-700aSolar Electricity0 aSolar Electricity aSecond Edition aChichester, EnglandbJohn Wiley & Sons a2711 aMarkvart, Tomas uhttp://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-100290nam a2200097 4500008004100000245003500041210003500076260001800111100002200129856004100151 2000 eng d00aSolid State Electronic Devices0 aSolid State Electronic Devices bPrentice Hall1 aStreetman, Ben, G uhttps://www.pveducation.org/node/39200784nas a2200181 4500008004100000022001300041245010900054210006900163260001600232300001400248490001200262100001600274700002200290700001500312700002200327700002300349856023000372 2000 eng d a0040609000aZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells0 aZnSe thin films grown by chemical vapour deposition for applicat cJan-02-2000 a172 - 1760 v361-3621 aRumberg, A.1 aSommerhalter, Ch.1 aToplak, M.1 aJäger-Waldau, A.1 aLux-Steiner, M.Ch. uhttp://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain00456nas a2200133 4500008004100000245008400041210006900125300001600194490000700210100001700217700001400234700001700248856005700265 1999 eng d00aEffects of Na on the electrical and structural properties of CuInSe20 aEffects of Na on the electrical and structural properties of CuI a7214–72180 v851 aWei, Su-Huai1 aZhang, SB1 aZunger, Alex uhttps://www.pveducation.org/reference/wei1999effects00578nas a2200169 4500008004100000245011900041210006900160260000800229300001400237490000700251653002100258653002200279100001900301700002300320700002100343856004400364 1999 eng d00aGeneralized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors0 aGeneralized analysis of quasisteadystate and quasitransient meas bAIP a6218-62210 v8610acarrier lifetime10aphotoconductivity1 aNagel, Henning1 aBerge, Christopher1 aAberle, Armin, G uhttp://link.aip.org/link/?JAP/86/6218/100670nas a2200229 4500008004100000245007600041210006900117300001400186490000700200100001900207700001900226700001300245700001900258700001400277700001400291700001300305700001300318700001400331700001700345700001100362856006700373 1999 eng d00aNa incorporation in Mo and CuInSe2 from production processes0 aNa incorporation in Mo and CuInSesub2sub from production process a255–2640 v591 aRockett, Angus1 aGranath, Karin1 aAsher, S1 aJassim, MM, Al1 aHasoon, F1 aMatson, R1 aBasol, B1 aKapur, V1 aBritt, JS1 aGillespie, T1 aothers uhttps://www.pveducation.org/reference/rockett1999incorporation00716nas a2200193 4500008004100000022001300041245005500054210005200109260001600161300001400177490000800191100001500199700001500214700001400229700001700243700001400260700001800274856023000292 1999 eng d a0038109800aPhotoeffects in cobalt doped pyrite (FeS 2 ) films0 aPhotoeffects in cobalt doped pyrite FeS 2 films cJan-07-1999 a235 - 2400 v1111 aThomas, B.1 aEllmer, K.1 aBohne, W.1 aRöhrich, J.1 aKunst, M.1 aTributsch, H. uhttp://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml00531nas a2200157 4500008004100000022001300041245009400054210006900148260001600217300001400233490000700247100001500254700001900269700001900288856006600307 1999 eng d a0254058400aPhotoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films0 aPhotoelectrochemical cells based on chemically deposited nanocry cJan-08-1999 a196 - 2030 v601 aMane, R.S.1 aSankapal, B.R.1 aLokhande, C.D. uhttp://linkinghub.elsevier.com/retrieve/pii/S025405849900085100433nas a2200121 4500008004100000245009500041210006900136260002000205100001200225700001200237700002100249856004100270 1998 eng d00a19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface0 a198 Efficient Multicrystalline Silicon Solar Cells with Honeycom aVienna, Austria1 aZhao, J1 aWang, A1 aGreen, Martin, A uhttps://www.pveducation.org/node/41300659nas a2200205 4500008004100000245011400041210006900155260000800224300001400232490000700246653002900253653001200282653001600294653002000310100001800330700001600348700002100364700002400385856004400409 1998 eng d00a19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells0 a198 efficient quothoneycombquot textured multicrystalline and 24 bAIP a1991-19930 v7310aelemental semiconductors10aSILICON10asolar cells10asurface texture1 aZhao, Jianhua1 aWang, Aihua1 aGreen, Martin, A1 aFerrazza, Francesca uhttp://link.aip.org/link/?APL/73/1991/100478nas a2200133 4500008004100000022001300041245009800054210006900152260001600221300001200237490000700249100002200256856006600278 1998 eng d a0927024800aCopper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate0 aCopper oxide thin films prepared by chemical vapor deposition fr cJan-09-1998 a85 - 920 v561 aMaruyama, Toshiro uhttp://linkinghub.elsevier.com/retrieve/pii/S092702489800128700499nas a2200157 4500008004100000245008000041210006900121260002900190100001400219700001200233700001300245700001400258700001100272700001700283856004100300 1998 eng d00aImproved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells0 aImproved Performance of SelfAligned SelectiveEmitter Silicon Sol aVienna, Austriac07/19981 aRuby, D S1 aYang, P1 aZaidi, S1 aBrueck, S1 aRoy, M1 aNarayanan, S uhttps://www.pveducation.org/node/37400643nas a2200205 4500008004100000022001300041245009600054210006900150260001600219300001200235490000800247100001900255700001600274700001600290700001600306700001500322700001600337700001800353856006600371 1998 eng d a0040609000aProcess and characterisation of chemical bath deposited manganese sulphide (MnS) thin films0 aProcess and characterisation of chemical bath deposited manganes cJan-09-1998 a70 - 750 v3301 aLokhande, C.D.1 aEnnaoui, A.1 aPatil, P.S.1 aGiersig, M.1 aMuller, M.1 aDiesner, K.1 aTributsch, H. uhttp://linkinghub.elsevier.com/retrieve/pii/S004060909800500800535nas a2200181 4500008004100000245008200041210006900123300001400192490000600206100001200212700001200224700001100236700001300247700001500260700001600275700002100291856004100312 1997 eng d00a20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race0 a20000 PERL silicon cells for the 1996 World Solar Challenge sola a269–2760 v51 aZhao, J1 aWang, A1 aYun, F1 aZhang, G1 aRoche, D M1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/node/41600498nas a2200133 4500008004100000245006500041210006500106100003000171700001400201700001500215700001600230700001500246856010300261 1997 eng d00aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films0 aHeterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films1 aFriedlmeier, Th, Magorian1 aWieser, N1 aWalter, Th1 aDittrich, H1 aSchock, HW uhttps://www.pveducation.org/reference/heterojunctions-based-on-cu2znsns4-and-cu2znsnse4-thin-films00514nas a2200157 4500008004100000245009100041210006900132260002200201300001800223100001500241700001600256700001600272700001200288700001500300856004100315 1997 eng d00aIsotropic texturing of multicrystalline silicon wafers with acidic texturing solutions0 aIsotropic texturing of multicrystalline silicon wafers with acid aNew York, NY, USA a167-170, 14511 aEinhaus, R1 aVazsonyi, E1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/node/30400491nas a2200157 4500008004100000245007200041210006900113300001200182490000700194100001600201700002000217700001400237700001700251700002400268856004100292 1997 eng d00aLow-cost industrial technologies of crystalline silicon solar cells0 aLowcost industrial technologies of crystalline silicon solar cel a711-7300 v851 aSzlufcik, J1 aSivoththaman, S1 aNlis, J F1 aMertens, R P1 aVan-Overstraeten, R uhttps://www.pveducation.org/node/39401267nas a2200205 4500008004100000022001400041245010100055210006900156300001400225490000700239520059000246653003200836100002300868700002400891700001700915700002000932700001700952700002100969856007100990 1997 eng d a0927-024800aPreparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors0 aPreparation and evaluation of Cu2ZnSnS4 thin films by sulfurizat a407 - 4140 v493 aBy sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm−1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.10aEB evaporated precursors1 aKatagiri, Hironori1 aSasaguchi, Nobuyuki1 aHando, Shima1 aHoshino, Suguro1 aOhashi, Jiro1 aYokota, Takaharu uhttp://www.sciencedirect.com/science/article/pii/S092702489700119000542nas a2200157 4500008004100000022001300041245010300054210006900157260001600226300001400242490000800256100002100264700002100285700001900306856005900325 1997 eng d a0031896500aPreparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications0 aPreparation of Zinc Selenide Thin Films by Electrodeposition Tec cJan-10-1997 aR11 - R120 v1631 aChandramohan, R.1 aSanjeeviraja, C.1 aMahalingam, T. uhttps://www.pveducation.org/reference/chandramohan199700301nas a2200109 4500008004100000245003900041210003900080300001200119490000600131100001300137856004100150 1997 eng d00aRecent progress in MIS solar cells0 aRecent progress in MIS solar cells a109-1200 v51 aHezel, R uhttps://www.pveducation.org/node/32800429nas a2200145 4500008004100000245005600041210005400097260002200151300001200173100001400185700001600199700001200215700001500227856004100242 1997 eng d00aA simple processing sequence for selective emitters0 asimple processing sequence for selective emitters aNew York, NY, USA a139-1421 aHorzel, J1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/node/33100458nas a2200133 4500008004100000245009000041210006900131260002200200300001600222100001300238700001500251700001700266856004100283 1997 eng d00aSurface texturing using reactive ion etching for multicrystalline silicon solar cells0 aSurface texturing using reactive ion etching for multicrystallin aNew York, NY, USA a1451, 47-501 aFukui, K1 aInomata, Y1 aShirasawa, K uhttps://www.pveducation.org/node/31100766nas a2200217 4500008004100000245016200041210007100203260000800274300001400282490000700296653002100303653002200324653002200346653002200368653002800390653001200418653003200430100002200462700002000484856004400504 1996 eng d00aContactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data0 aContactless determination of current–voltage characteristics and bAIP a2510-25120 v6910acarrier lifetime10aCV CHARACTERISTIC10aMINORITY CARRIERS10aphotoconductivity10aSEMICONDUCTOR MATERIALS10aSILICON10aSTEADY – STATE CONDITIONS1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?APL/69/2510/100456nas a2200145 4500008004100000022001400041245004100055210004100096300001200137490000700149100001600156700001400172700002300186856010100209 1996 eng d a0927-024800aTexturing of polycrystalline silicon0 aTexturing of polycrystalline silicon a33 - 420 v401 aStocks, M J1 aCarr, A J1 aBlakers, Andrew, W uhttp://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf54100472nas a2200145 4500008004100000022001300041245006800054210006800122260001600190300001300206490000700219100001600226700001900242856006500261 1995 eng d a0254058400aChemical deposition of Bi2S3 thin films from thioacetamide bath0 aChemical deposition of Bi2S3 thin films from thioacetamide bath cJan-07-1995 a98 - 1030 v411 aDesai, J.D.1 aLokhande, C.D. uhttp://linkinghub.elsevier.com/retrieve/pii/025405849501538800418nas a2200145 4500008004100000022001300041245005300054210005300107260000900160300001400169490000600183100002100189700002100210856004100231 1995 eng d a1099159X00aOptical properties of intrinsic silicon at 300 K0 aOptical properties of intrinsic silicon at 300 K c1995 a189 - 1920 v31 aGreen, Martin, A1 aKeevers, Mark, J uhttps://www.pveducation.org/node/31600432nam a2200097 4500008004100000245011700041210006900158260004200227100002400269856004100293 1995 eng d00aSMARTS2: a simple model of the atmospheric radiative transfer of sunshine: algorithms and performance assessment0 aSMARTS2 a simple model of the atmospheric radiative transfer of bFlorida Solar Energy Center Cocoa, FL1 aGueymard, Christian uhttps://www.pveducation.org/node/55600454nas a2200145 4500008004100000245007400041210006900115300001200184490000700196100001400203700001400217700001900231700001700250856004100267 1995 eng d00aOn some thermodynamic aspects of photovoltaic solar energy conversion0 asome thermodynamic aspects of photovoltaic solar energy conversi a201-2220 v361 aBaruch, P1 aDe Vos, A1 aLandsberg, P T1 aParrott, J E uhttps://www.pveducation.org/node/27900358nas a2200133 4500008004100000022001400041245004200055210004000097260001200137300001200149490000800161100001400169856004100183 1995 eng d a1095-920300aSun’s Role in Warming Is Discounted0 aSun s Role in Warming Is Discounted c04/1995 a28 - 290 v2681 aKerr, R A uhttps://www.pveducation.org/node/33700380nas a2200133 4500008004100000245004300041210004300084300001400127490000600141100001900147700002400166700001500190856004100205 1994 eng d00a7000 High Efficiency Cells for a Dream0 a7000 High Efficiency Cells for a Dream a143 - 1520 v21 aVerlinden, P J1 aSwanson, Richard, M1 aCrane, R A uhttps://www.pveducation.org/node/40100291nas a2200085 4500008004100000245005500041210005400096100001400150856004100164 1994 eng d00aAttaining Thirty-Year Photovoltaic System Lifetime0 aAttaining ThirtyYear Photovoltaic System Lifetime1 aDurand, S uhttps://www.pveducation.org/node/30200339nas a2200121 4500008004100000245004400041210004400085300001200129490000600141100001400147700001500161856004100176 1994 eng d00aBuried contact concentrator solar cells0 aBuried contact concentrator solar cells a171-1760 v21 aJordan, D1 aNagle, J P uhttps://www.pveducation.org/node/33400420nas a2200145 4500008004100000022001400041245004300055210004300098260001600141300001400157490000600171100002300177700002400200856005000224 1994 eng d a0935-964800aCVD routes to titanium disulfide films0 aCVD routes to titanium disulfide films cJan-03-1994 a237 - 2390 v61 aLewkebandara, T.S.1 aWinter, Charles, H. uhttp://doi.wiley.com/10.1002/adma.1994006031300336nas a2200109 4500008004100000245005500041210005500096300001200151490000600163100001600169856004100185 1994 eng d00aDefining terms for crystalline silicon solar cells0 aDefining terms for crystalline silicon solar cells a177-1790 v21 aBasore, P A uhttps://www.pveducation.org/node/28000481nas a2200157 4500008004100000022001300041245007400054210006900128260000900197300000900206490000700215100001800222700002100240700002100261856004100282 1994 eng d a0021897900aDepartures from the principle of superposition in silicon solar cells0 aDepartures from the principle of superposition in silicon solar c1994 a79200 v761 aRobinson, S J1 aAberle, Armin, G1 aGreen, Martin, A uhttps://www.pveducation.org/node/37100666nas a2200205 4500008004100000245012500041210006900166260000800235300001400243490000700257653002400264653002100288653001000309653002200319653001800341653002800359653001300387100001600400856004400416 1994 eng d00aDimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors0 aDimensionless solution of the equation describing the effect of bAIP a2851-28540 v7610aANALYTICAL SOLUTION10acarrier lifetime10aDECAY10aMINORITY CARRIERS10aRECOMBINATION10aSEMICONDUCTOR MATERIALS10aSURFACES1 aSproul, A B uhttp://link.aip.org/link/?JAP/76/2851/100669nas a2200205 4500008004100000245007600041210006900117260002800186100001800214700001900232700001900251700002000270700001800290700001700308700001800325700001600343700001700359700001400376856007300390 1994 eng d00aInvestigation on SnS film by RF sputtering for photovoltaic application0 aInvestigation on SnS film by RF sputtering for photovoltaic appl aWaikoloa, HI, USAbIEEE1 aGuang-Pu, Wei1 aZhi-Lin, Zhang1 aWei-Ming, Zhao1 aXiang-Hong, Gao1 aWei-Qun, Chen1 aTanamura, H.1 aYamaguchi, M.1 aNoguchi, H.1 aNagatomo, T.1 aOmoto, O. uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=51997700578nas a2200157 4500008004100000022001400041245011000055210006900165260001600234300001800250490000600268100001900274700001700293700001500310856009500325 1994 eng d a0953-898400aTemperature dependence of the optical absorption edge of pyrite FeS 2 thin films0 aTemperature dependence of the optical absorption edge of pyrite cFeb-11-1995 a10177 - 101830 v61 aHeras, de, las1 aFerrer, I, J1 aSanchez, C uhttp://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd3500429nam a2200121 4500008004100000020001500041245007700056210006900133250000600202260002300208100002300231856005300254 1994 eng d a047158005800a{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition0 aVLSI Fabrication Principles Silicon and Gallium Arsenide 2nd Edi a2 bWiley-Interscience1 aGhandhi, Sorab, K. uhttps://www.pveducation.org/reference/ghandi199401003nas a2200157 4500008004100000022001300041245008400054210006900138260001600207300000900223490000700232520051500239100002700754700002300781856004100804 1993 eng d a0021897900aAccurate measurements of the silicon intrinsic carrier density from 78 to 340 K0 aAccurate measurements of the silicon intrinsic carrier density f cJan-01-1993 a32930 v743 aThe intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.1 aMisiakos, Konstantinos1 aTsamakis, Dimitris uhttps://www.pveducation.org/node/54200455nas a2200133 4500008004100000022001400041245005700055210005700112260001200169300001400181490000700195100001700202856010200219 1993 eng d a0038-092X00aChoice of an equivalent black body solar temperature0 aChoice of an equivalent black body solar temperature c09/1993 a195 - 1950 v511 aParrott, J E uhttp://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb600471nas a2200145 4500008004100000022001400041245007700055210006900132260001600201300001600217490000700233100001800240700001400258856005300272 1993 eng d a0163-182900aElectronic, optical, and structural properties of some wurtzite crystals0 aElectronic optical and structural properties of some wurtzite cr cJan-08-1993 a4335 - 43510 v481 aXu, Yong-Nian1 aChing, W. uhttp://link.aps.org/doi/10.1103/PhysRevB.48.433500444nas a2200121 4500008004100000245009400041210006900135260001900204100002100223700001600244700002100260856004100281 1993 eng d00aA New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells0 aNew Method for the Accurate Measurements of the Lumped Series Re aLouisville, KY1 aAberle, Armin, G1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/node/27201606nas a2200241 4500008004100000022002500041245014700066210006900213300001400282490000800296520080900304653001401113653002201127653002101149653002301170653001501193100001701208700002001225700003001245700002301275700002301298856004301321 1993 eng d a0013-4651, 1945-711100aStructure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties0 aStructure and Composition of Chemically Deposited Thin Films of a754–7590 v1403 aChemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200°C} and remain stable up to {300°C.} But oxygen chemisorption reduces the photo‐ and dark conductivities of the films annealed at {300°C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220°C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {∼300°C.}10aannealing10abismuth compounds10acopper compounds10aoptical properties10aThin films1 aNair, P., K.1 aNair, M., T. S.1 aPathirana, Hema, M. K. K.1 aZingaro, Ralph, A.1 aMeyers, Edward, A. uhttp://jes.ecsdl.org/content/140/3/75400565nas a2200133 4500008004100000022001300041245005000054210004600104260001600150300001400166490000700180100001700187856022700204 1992 eng d a0025540800aThe crystal structures of CuInSe2 and CuInTe20 acrystal structures of CuInSe2 and CuInTe2 cJan-02-1992 a161 - 1670 v271 aKnight, K.S. uhttp://linkinghub.elsevier.com/retrieve/pii/002554089290209Ihttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/plain00707nas a2200121 4500008004100000245007300041210006900114490000700183520034400190100001600534700002100550856001400571 1992 eng d00aLattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry0 aLattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrom0 v723 aThe vibrational spectra of the chalcopyrite compounds CuInSe2 and CuGaSe2 have been studied by Raman microspectrometry. This technique is very useful in the present case where large single crystals are not generally available. The results have been used to resolve discrepancies in the reported data on the vibrational spectrum of CuInSe2.1 aRincón, C.1 aRamírez, F., J. u4321-432400557nas a2200157 4500008004100000022001400041245009200055210006900147300001400216490000700230100001500237700001800252700001400270700001400284856010100298 1992 eng d a0927-024800aA simple and effective light trapping technique for polycrystalline silicon solar cells0 asimple and effective light trapping technique for polycrystallin a345 - 3560 v261 aWilleke, G1 aNussbaumer, H1 aBender, H1 aBucher, E uhttp://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c5100389nam a2200097 4500008004100000245007400041210006900115260004500184100002100229856004100250 1992 eng d00aSolar Cells - Operating Principles, Technology and System Application0 aSolar Cells Operating Principles Technology and System Applicati aKensington, AustraliabUniversity of NSW1 aGreen, Martin, A uhttps://www.pveducation.org/node/32200347nas a2200121 4500008004100000245004400041210004400085300001200129490000600141100002000147700001700167856004100184 1991 eng d00aBuried contact concentrator solar cells0 aBuried contact concentrator solar cells a273-2770 v11 aWohlgemuth, J H1 aNarayanan, S uhttps://www.pveducation.org/node/40800523nas a2200157 4500008004100000245010200041210006900143260001900212300001200231100001600243700001600259700001700275700001500292700001700307856004100324 1991 eng d00aDecline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates0 aDecline of the Carrisa Plains PV Power Plant The Impact of Conce aLas Vegas, USA a586-5921 aWenger, H J1 aSchaefer, J1 aRosenthal, A1 aHammond, B1 aSchlueter, L uhttps://www.pveducation.org/node/40400733nas a2200241 4500008004100000245008500041210006900126260000800195300001200203490000700215653002000222653002200242653002000264653002300284653002200307653002400329653001200353653001900365653002700384100001600411700002100427856004300448 1991 eng d00aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f bAIP a846-8540 v7010aCARRIER DENSITY10aIV CHARACTERISTIC10aJUNCTION DIODES10aMEDIUM TEMPERATURE10aMINORITY CARRIERS10aSANDIA LABORATORIES10aSILICON10aSILICON DIODES10aTEMPERATURE DEPENDENCE1 aSproul, A B1 aGreen, Martin, A uhttp://link.aip.org/link/?JAP/70/846/100456nas a2200145 4500008004100000022001300041245008500054210006900139260000900208300000800217490000700225100001600232700002100248856004100269 1991 eng d a0021897900aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f c1991 a8460 v701 aSproul, A B1 aGreen, Martin, A uhttps://www.pveducation.org/node/39000415nas a2200145 4500008004100000245005100041210005100092300001200143100001200155700001300167700001100180700002100191700001600212856004100228 1991 eng d00aImprovements in Silicon Solar Cell Performance0 aImprovements in Silicon Solar Cell Performance a399-4021 aZhao, J1 aA., Wang1 aDai, X1 aGreen, Martin, A1 aWenham, S R uhttps://www.pveducation.org/node/41500526nas a2200145 4500008004100000022001400041245003100055210003100086260001600117300001600133490000700149100001800156700002300174856018300197 1991 eng d a0163-182900aOptical properties of ZnSe0 aOptical properties of ZnSe cJan-04-1991 a9569 - 95770 v431 aAdachi, Sadao1 aTaguchi, Tsunemasa uhttps://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.956900513nam a2200145 4500008004100000245006700041210006300108260005500171100002300226700002100249700001200270700001600282700001500298856005400313 1991 eng d00aThe Role of Photovoltaics in Reducing Greenhouse Gas Emissions0 aRole of Photovoltaics in Reducing Greenhouse Gas Emissions aCanberrabAustralian Government Publishing Service1 aBlakers, Andrew, W1 aGreen, Martin, A1 aLeo, T.1 aOuthred, H.1 aRobins, B. uhttps://www.pveducation.org/reference/blakers199100389nas a2200097 4500008004100000245011400041210006900155100001200224700001400236856004100250 1991 eng d00aA Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources0 aSensitivity Analysis of the Spectral Mismatch Correction Procedu1 aKing, D1 aHansen, B uhttps://www.pveducation.org/node/34000499nas a2200181 4500008004100000245005400041210005300095300001200148490000600160100001700166700001400183700001100197700001600208700001600224700001500240700002100255856004100276 1990 eng d00a18% efficient polycrystalline silicon solar cells0 a18 efficient polycrystalline silicon solar cells a678-6800 v11 aNarayanan, S1 aZolper, J1 aYun, F1 aWenham, S R1 aSproul, A B1 aChong, C M1 aGreen, Martin, A uhttps://www.pveducation.org/node/35500471nas a2200157 4500008004100000022001300041245007600054210006900130260000900199300000800208490000700216100001600223700002100239700001200260856004100272 1990 eng d a0003695100aImproved value for the silicon intrinsic carrier concentration at 300 K0 aImproved value for the silicon intrinsic carrier concentration a c1990 a2550 v571 aSproul, A B1 aGreen, Martin, A1 aZhao, J uhttps://www.pveducation.org/node/38900431nas a2200145 4500008004100000022001300041245006000054210005800114300001600172490000700188100001400195700001600209700001900225856004100244 1990 eng d a0018938300aMinority-carrier transport parameters in n-type silicon0 aMinoritycarrier transport parameters in ntype silicon a1314 - 13220 v371 aWang, C H1 aMisiakos, K1 aNeugroschel, A uhttps://www.pveducation.org/node/40200611nas a2200169 4500008004100000022001400041245009500055210006900150300001400219490000700233100001900240700002100259700001800280700002200298700002000320856010100340 1990 eng d a0038-092X00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271 - 2890 v441 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e01652nas a2200181 4500008004100000022001600041245009500057210006900152300001400221490000700235520102700242100001901269700002101288700001801309700002201327700002001349856010101369 1990 eng d a{0038-092X}00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271–2890 v443 aThis paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
1 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e02149nas a2200445 4500008004100000022001400041245006700055210006600122260001200188300001300200490000700213520083600220653002901056653002801085653002701113653003201140653001701172653002501189653002501214653001901239653003101258653003501289653002901324653002501353653002101378653003101399653001001430653002001440653002301460653003201483653001901515653000701534653001201541653001601553653003701569653002501606653001501631100001601646856004101662 1990 eng d a0018-938300aNumerical modeling of textured silicon solar cells using PC-1D0 aNumerical modeling of textured silicon solar cells using PC1D c02/1990 a337 -3430 v373 aPC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells10aelemental semiconductors10afinite element analysis10afinite-element program10afront-surface recombination10aheavy doping10ahigh-level injection10ainternal performance10alight trapping10amicrocomputer applications10amodeling semiconductor devices10amultidimensional effects10anonplanar structures10anumerical models10aoblique photon path angles10aPC-1D10aPC-1D Version 210apersonal computers10asemiconductor device models10asemiconductors10aSi10aSILICON10asolar cells10aspectral quantum efficiency data10atextured solar cells10atransients1 aBasore, P A uhttps://www.pveducation.org/node/44101165nas a2200121 4500008004100000245003300041210003200074260002600106300000800132520080900140100002100949856007300970 1990 eng d00aPhotovoltaics: Coming of Age0 aPhotovoltaics Coming of Age aOrlando, USAc05/1990 a1-83 aThe history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.1 aGreen, Martin, A uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=11158200524nas a2200157 4500008004100000022001300041245008700054210006900141300000900210490000700219100002000226700003000246700002200276700002100298856004700319 1989 eng d a0003695100a16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell0 a167 efficient laser textured buried contact polycrystalline sili a23630 v551 aZolper, John, C1 aNarayanan, Srinivasamohan1 aWenham, Stuart, R1 aGreen, Martin, A uhttp://apl.aip.org/applab/v55/i22/p2363_s100431nas a2200133 4500008004100000245006200041210006200103260001700165300001600182490000700198100001800205700002100223856005300244 1989 eng d00aRevised optical air mass tables and approximation formula0 aRevised optical air mass tables and approximation formula bOSAc11/1989 a4735–47380 v281 aKasten, Fritz1 aYoung, Andrew, T uhttp://ao.osa.org/abstract.cfm?URI=ao-28-22-473500317nas a2200109 4500008004100000245003000041210003000071260001300101100002200114700002100136856005000157 1988 eng d00aBuried contact solar cell0 aBuried contact solar cell cFebruary1 aWenham, Stuart, R1 aGreen, Martin, A uhttp://www.freepatentsonline.com/4726850.html00482nas a2200145 4500008004100000022001400041245009100055210006900146260001600215300001600231490000700247100001700254700002100271856004400292 1988 eng d a0021-492200aElectrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films0 aElectrical and Optical Properties of StanniteType Quaternary Sem cAug-11-1989 a2094 - 20970 v271 aIto, Kentaro1 aNakazawa, Tatsuo uhttp://stacks.iop.org/1347-4065/27/209400343nas a2200121 4500008004100000245004600041210004400087300000900131100001300140700001300153700001400166856004100180 1988 eng d00aSOLAR SIMULATION - PROBLEMS AND SOLUTIONS0 aSOLAR SIMULATION PROBLEMS AND SOLUTIONS a10871 aEmery, K1 aMyers, D1 aRummel, S uhttps://www.pveducation.org/node/30600803nas a2200253 4500008004100000245013700041210006900178260000800247300001400255490000700269653002100276653002700297653002200324653001800346653001200364653002400376653002300400653002100423653001300444653001100457100001900468700001800487856004400505 1987 eng d00aAnalysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity0 aAnalysis of the interaction of a laser pulse with a silicon wafe bAIP a2282-22930 v6110acarrier lifetime10aLASERRADIATION HEATING10aMINORITY CARRIERS10aRECOMBINATION10aSILICON10aSILICON SOLAR CELLS10aSURFACE PROPERTIES10aTHEORETICAL DATA10aVELOCITY10aWAFERS1 aLuke, Keung, L1 aCheng, Li-Jen uhttp://link.aip.org/link/?JAP/61/2282/100441nas a2200145 4500008004100000022001300041245006300054210006300117260001600180300000800196490000700204100002200211700002100233856004100254 1987 eng d a0021897900aLight trapping properties of pyramidally textured surfaces0 aLight trapping properties of pyramidally textured surfaces cJan-01-1987 a2430 v621 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/node/52700403nas a2200145 4500008004100000022001400041245004500055210004500100260000800145300001600153490000700169100001600176700002400192856004100216 1987 eng d a0018-938300aRecombination in highly injected silicon0 aRecombination in highly injected silicon cjun a1380 - 13890 v341 aSinton, R A1 aSwanson, Richard, M uhttps://www.pveducation.org/node/38400888nas a2200181 4500008004100000022001400041245006300055210005900118260001600177300001400193490000700207520031700214100001400531700001800545700001400563700001500577856011400592 1986 eng d a0022-372700aThe diode quality factor of solar cells under illumination0 adiode quality factor of solar cells under illumination cFeb-03-1987 a483 - 4920 v193 aA review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. 1 aMialhe, P1 aCharles, J, P1 aKhoury, A1 aBordure, G uhttps://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf00376nas a2200121 4500008004100000245004800041210004700089260003000136300001000166100002000176700001700196856004100213 1986 eng d00aFlat-Plate Solar Array Project Final Report0 aFlatPlate Solar Array Project Final Report bJet Propulsion Laboratory a86-311 aRoss, Jnr., R G1 aSmokler, M I uhttps://www.pveducation.org/node/37200593nas a2200145 4500008004100000022001400041245014700055210006900202260001600271300001200287490000700299100002200306700001900328856010000347 1986 eng d a0733-302100aSimple Solar Spectral Model for Direct and Diffuse Irradiance on Horizontal and Tilted Planes at the Earth's Surface for Cloudless Atmospheres0 aSimple Solar Spectral Model for Direct and Diffuse Irradiance on cJan-01-1986 a87 - 970 v251 aBird, Richard, E.1 aRiordan, Carol uhttp://journals.ametsoc.org/doi/abs/10.1175/1520-0450%281986%29025%3C0087%3ASSSMFD%3E2.0.CO%3B200473nas a2200145 4500008004100000022001300041245009200054210006900146260000900215300000900224490000700233100002200240700002400262856004100286 1985 eng d a0021897900aCalculation of surface generation and recombination velocities at the Si-SiO2 interface0 aCalculation of surface generation and recombination velocities a c1985 a42670 v581 aEades, Wendell, D1 aSwanson, Richard, M uhttps://www.pveducation.org/node/30300284nam a2200109 4500008004100000245001500041210001500056260003400071100001500105700001300120856004100133 1985 eng d00aPerception0 aPerception aNew YorkbAlfred A. Knopf Inc1 aSekuler, R1 aBlake, R uhttps://www.pveducation.org/node/37700281nam a2200085 4500008004100000245004900041210004700090100001700137856004100154 1985 eng d00aQED : The Strange Theory of Light and Matter0 aQED The Strange Theory of Light and Matter1 aFeynman, R P uhttps://www.pveducation.org/node/30701203nas a2200157 4500008004100000022001300041245008400054210006900138260001600207300000900223490000800232520071800240100001600958700002000974856005100994 1984 eng d a0013465100aOn the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon0 aEffect of Impurities on the Photovoltaic Behavior of SolarGrade cJan-01-1984 a21280 v1313 aThe electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation. 1 aPizzini, S.1 aCalligarich, C. uhttp://jes.ecsdl.org/cgi/doi/10.1149/1.211603300407nas a2200145 4500008004100000245004700041210004700088260001200135490001000147100001400157700001900171700001400190700001600204856004100220 1984 eng d00aLimiting Efficiency of Silicon Solar Cells0 aLimiting Efficiency of Silicon Solar Cells c05/19840 vED-311 aTiedje, T1 aYablonovich, E1 aCody, G D1 aBrooks, B G uhttps://www.pveducation.org/node/39900335nam a2200097 4500008003900000245004700039210004700086260005400133100000900187856004100196 1984 d00aPhotovoltaics for Residential Applications0 aPhotovoltaics for Residential Applications aGolden, ColoradobSolar Energy Research Institute1 aSERI uhttps://www.pveducation.org/node/42001676nas a2200265 4500008004100000022001400041245011300055210006900168300001200237490001000249520089300259653001201152653001001164653002001174653002101194653002301215653002901238653003301267653001501300653001201315100001501327700001401342700001301356856004101369 1983 eng d a0018-938300aModeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon0 aModeling of carrier mobility against carrier concentration in ar a764–90 vED-303 aNew carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
10aarsenic10aboron10aCARRIER DENSITY10acarrier mobility10adigital simulation10aelemental semiconductors10aheavily doped semiconductors10aphosphorus10aSILICON1 aMasetti, G1 aSeveri, M1 aSolmi, S uhttps://www.pveducation.org/node/35000351nas a2200133 4500008004100000245003900041210003600080300001400116490000700130100001200137700001300149700001400162856004100176 1983 eng d00aOn Phosphorus Diffusion in Silicon0 aPhosphorus Diffusion in Silicon a6912-69220 v541 aHu, S M1 aFahey, P1 aSutton, P uhttps://www.pveducation.org/node/33300338nam a2200109 4500008004100000245004800041210004700089260002600136100001000162700001500172856004100187 1983 eng d00aSolar Cells: From Basic to Advanced Systems0 aSolar Cells From Basic to Advanced Systems aNew YorkbMcGraw-Hill1 aHu, C1 aWhite, R M uhttps://www.pveducation.org/node/33200275nas a2200097 4500008004100000245003000041210002900071260002000100100001600120856004100136 1983 eng d00aVoltaic Cell, Chapter XIV0 aVoltaic Cell Chapter XIV aNew YorkbWiley1 aBenjamin, P uhttps://www.pveducation.org/node/28300365nas a2200109 4500008004100000245006700041210006700108300001200175490000600187100002100193856004100214 1982 eng d00aAccuracy of Analytical Expressions for Solar Cell Fill Factors0 aAccuracy of Analytical Expressions for Solar Cell Fill Factors a337-3400 v71 aGreen, Martin, A uhttps://www.pveducation.org/node/32100397nas a2200121 4500008004100000245006900041210006900110300001200179490001000191100001900201700001400220856004100234 1982 eng d00aIntensity Enhancement in Textured Optical Sheets for Solar Cells0 aIntensity Enhancement in Textured Optical Sheets for Solar Cells a300-3050 vED-291 aYablonovich, E1 aCody, G D uhttps://www.pveducation.org/node/41200435nas a2200133 4500008004100000020001800041245007400059210006900133260001800202300000800220520001100228100002100239856004100260 1982 eng d a0-85823-580-300aSolar Cells: Operating Principles, Technology and System Applications0 aSolar Cells Operating Principles Technology and System Applicati bPrentice-Hall a2743 aA surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
1 aBailey, William, L1 aColeman, Michael, G1 aHarris, Cynthia, B1 aLesk, Israel, A uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,12301088nas a2200169 4500008004100000022001300041245003600054210003500090260001600125300001400141490000700155520063800162100001800800700002200818700001300840856006500853 1978 eng d a0022369700aElectrical properties of α-MnS0 aElectrical properties of αMnS cJan-01-1978 a833 - 8400 v393 aElectrical data including thermoelectric power, Hall effect and resistivity on iodine-grown crystals of p-type α-MnS are reported. A study of the temperature dependences reveals that the conductivity occurs by holes in a 3d-band (Mn3+) and that the mobility of the holes is not thermally activated. Photoelectron spectra confirm the 3d character of the top of the valence band. Accurate analysis of the electrical data gives a satisfactory explanation of the extrinsic and intrinsic behaviour; the simultaneous presence of donors (substitutional iodine) and acceptors (manganese vacancies) is responsible for the observed phenomena.1 aHeikens, H.H.1 aVan Bruggen, C.F.1 aHaas, C. uhttp://linkinghub.elsevier.com/retrieve/pii/002236977890141500435nas a2200109 4500008004100000245012300041210006900164260002600233300000800259100001700267856004100284 1978 eng d00aOptimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations0 aOptimizing Solar Cell Performance by Simultaneous Consideration aWashington, D.C., USA a1-81 aSerreze, H B uhttps://www.pveducation.org/node/37800429nas a2200121 4500008004100000245010600041210006900147300001200216490001000228100001400238700001400252856004100266 1977 eng d00aElectronic processes at grain boundaries in polycrystalline semiconductors under optical illumination0 aElectronic processes at grain boundaries in polycrystalline semi a397-4020 vED-241 aCard, H C1 aYang, E S uhttps://www.pveducation.org/node/29200760nas a2200145 4500008004100000022001400041245006500055210006300120260001200183300001400195490000700209520034100216100001600557856004100573 1977 eng d a0018-938300aPhysical operation of back-surface-field silicon solar cells0 aPhysical operation of backsurfacefield silicon solar cells c04/1977 a322 - 3250 v243 aUsing exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
1 aFossum, J G uhttps://www.pveducation.org/node/30900308nam a2200109 4500008004100000245002500041210002500066260003400091100001600125700001600141856004100157 1976 eng d00aApplied Solar Energy0 aApplied Solar Energy bAddison Wesley Publishing Co.1 aMeinel, A B1 aMeinel, M P uhttps://www.pveducation.org/node/35200447nas a2200145 4500008004100000022001400041245004700055210004300102260001600145300001400161490000600175100001300181700001300194856009400207 1976 eng d a0022-372700aThe electrical properties of zinc selenide0 aelectrical properties of zinc selenide cJan-04-1976 a799 - 8100 v91 aJones, G1 aWoods, J uhttp://stacks.iop.org/0022-3727/9/i=5/a=013?key=crossref.d0fe6103237fcfbfd2221126652bc33b00291nas a2200097 4500008004100000245004200041210004200083260001500125100001200140856004100152 1976 eng d00aHistorical Development of Solar Cells0 aHistorical Development of Solar Cells bIEEE Press1 aWolf, M uhttps://www.pveducation.org/node/40901390nam a2200121 4500008004100000245001600041210001600057260001900073300000800092520111100100100001601211856004101227 1976 eng d00aSolar Cells0 aSolar Cells aNew YorkbIEEE a5123 aThe present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells
1 aBackus, C E uhttps://www.pveducation.org/node/27700471nas a2200133 4500008004100000022001400041245006100055210006100116300001200177490000700189100001900196700002100215856010100236 1976 eng d a0038-092X00aSolar thermal power system based on optical transmission0 aSolar thermal power system based on optical transmission a31 - 390 v181 aVant-Hull, L L1 aHildebrandt, A F uhttp://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f8969649800511nas a2200157 4500008004100000022001400041245007400055210006300129260001600192300001400208490000700222100001700229700001600246700001700262856007400279 1975 eng d a0018-949900aBi2S3 as a high Z material for γ-ray detectors0 aBisub2subSsub3sub as a high Z material for γray detectors cJan-02-1975 a246 - 2500 v221 aWald, F., V.1 aBullitt, J.1 aBell, R., O. uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=432764600751nas a2200157 4500008004100000022001300041245006200054210006200116260001600178300000900194490000700203520027900210100002800489700002400517856005200541 1975 eng d a0021960600aIntercalation and lattice expansion in titanium disulfide0 aIntercalation and lattice expansion in titanium disulfide cJan-01-1975 a15880 v623 aThe temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s−collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure.1 aWhittingham, Stanley, M1 aThompson, Arthur, H uhttp://link.aip.org/link/?JCP/62/1588/1&Agg=doi00457nas a2200145 4500008004100000245006500041210005900106300001400165490000700179100001900186700001300205700001800218700001500236856006000251 1974 eng d00aCuInSe2/CdS heterojunction photovoltaic detectors0 aCuInSesub2subCdS heterojunction photovoltaic detectors a434–4350 v251 aWagner, Sigurd1 aShay, JL1 aMigliorato, P1 aKasper, HM uhttps://www.pveducation.org/reference/wagner1974cuinse202445nas a2200169 4500008004100000022001300041245012200054210006900176260001600245300001400261490000700275520171800282100001602000700001502016700001702031856022702048 1974 eng d a0038110100aMinority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory0 aMinority carrier MIS tunnel diodes and their application to elec cJan-06-1974 a551 - 5610 v173 aIf the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (<60 Å for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (<30 Å), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the “ideal diode” law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects.1 aGreen, M.A.1 aKing, F.D.1 aShewchun, J. uhttp://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain00457nas a2200145 4500008004100000245007000041210006900111300001200180100001400192700001400206700001400220700002000234700001600254856004100270 1973 eng d00aOptimum Design of Anti-reflection coating for silicon solar cells0 aOptimum Design of Antireflection coating for silicon solar cells a168-1711 aWang, E Y1 aYu, F T S1 aSims, V L1 aBrandhorst, E W1 aBroder, J D uhttps://www.pveducation.org/node/40300619nas a2200169 4500008004100000022001400041245005600055210005600111260001600167300001400183490000600197100001700203700001700220700001500237700002000252856017700272 1972 eng d a0556-280500aOptical Properties of Substitutional Donors in ZnSe0 aOptical Properties of Substitutional Donors in ZnSe cJan-07-1972 a545 - 5560 v61 aMerz, J., L.1 aKukimoto, H.1 aNassau, K.1 aShiever, J., W. uhttps://link.aps.org/doi/10.1103/PhysRevB.6.545http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.545/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.6.54500957nas a2200145 4500008004100000022001300041245007800054210006900132260001600201300000900217490000700226520052400233100001300757856004100770 1971 eng d a0021897900aHigh Electron Mobility in Zinc Selenide Through Low-Temperature Annealing0 aHigh Electron Mobility in Zinc Selenide Through LowTemperature A cJan-01-1971 a12040 v423 aElectron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.1 aAven, M. uhttps://www.pveducation.org/node/53100480nas a2200121 4500008004100000022001400041245008500055210006900140300002800209490000700237100001400244856010000258 1970 eng d a0038-092X00aThe measurement of solar spectral irradiance at different terrestrial elevations0 ameasurement of solar spectral irradiance at different terrestria a43 - 50, IN1-IN4, 51-570 v131 aLaue, E G uhttp://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a00407nas a2200121 4500008004100000022001400041245004800055210004400103300001400147490000700161100001600168856010100184 1969 eng d a0038-092X00aThe absorption of radiation in solar stills0 aabsorption of radiation in solar stills a333 - 3460 v121 aCooper, P I uhttp://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc500473nas a2200133 4500008004100000022001400041245005300055210005300108260001600161300001600177490000700193100001700200856012200217 1969 eng d a0018-921900aShallow phosphorus diffusion profiles in silicon0 aShallow phosphorus diffusion profiles in silicon cJan-09-1969 a1499 - 15060 v571 aTsai, J.C.C. uhttp://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=144925500535nas a2200145 4500008004100000022001400041245013100055210006900186260001600255300001400271490000600285100002500291700002100316856005200337 1968 eng d a0020-166900aElectrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide0 aElectrical properties of the Group IV disulfides titanium disulf cJan-03-1968 a459 - 4630 v71 aConroy, Lawrence, E.1 aPark, Kyu, Chang uhttp://pubs.acs.org/doi/abs/10.1021/ic50061a01500483nas a2200157 4500008004100000022001400041245006300055210006100118260001600179300001400195490000800209100001600217700002000233700002000253856005200273 1968 eng d a0031-899X00aElectroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn0 aElectroreflectance Measurements on Mg2Si Mg2Ge and Mg2Sn cJan-12-1968 a905 - 9080 v1761 aVazquez, F.1 aForman, Richard1 aCardona, Manuel uhttp://link.aps.org/doi/10.1103/PhysRev.176.90500523nas a2200181 4500008004100000022001400041245004500055210003600100260001600136300001600152490000700168100002100175700001900196700002700215700001700242700001700259856006500276 1965 eng d a0904-213X00aOn the Properties of alpha-MnS and MnS2.0 aProperties of alphaMnS and MnS2 cJan-01-1965 a1405 - 14100 v191 aFuruseth, Sigrid1 aKjekshus, Arne1 aNiklasson, Rune, J. V.1 aBrunvoll, J.1 aHinton, Merv uhttp://actachemscand.org/doi/10.3891/acta.chem.scand.19-140501055nas a2200133 4500008004100000245008800041210006900129300001200198490000600210520062200216100001700838700001600855856005000871 1964 eng d00aNondestructive determination of thickness and refractive index of transparent films0 aNondestructive determination of thickness and refractive index o a43–510 v83 aA simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
1 aPliskin, W A1 aConrad, E E uhttp://portal.acm.org/citation.cfm?id=166239100366nam a2200121 4500008004100000245002500041210002500066250000800091260004900099490000600148100002400154856006600178 1963 eng d00aCrystal Structures 10 aCrystal Structures 1 a2nd a New York, New YorkbInterscience Publishers0 v11 aWyckoff, Ralph, W G uhttp://rruff.geo.arizona.edu/AMS/AMC_text_files/13434_amc.txt00442nas a2200145 4500008004100000022001400041245003200055210003200087260001600119300001600135490000700151100001800158700001900176856010100195 1963 eng d a0021-897900aElastic Constants of Pyrite0 aElastic Constants of Pyrite cJan-09-1963 a2736 - 27380 v341 aSimmons, Gene1 aBirch, Francis uhttp://aip.scitation.org/doi/10.1063/1.1729801http://aip.scitation.org/doi/pdf/10.1063/1.172980100344nas a2200109 4500008004100000245005700041210005700098490000600155100001200161700002000173856004100193 1963 eng d00aSeries Resistance Effects on Solar Cell Measurements0 aSeries Resistance Effects on Solar Cell Measurements0 v31 aWolf, M1 aRauschenbach, H uhttps://www.pveducation.org/node/41000426nas a2200133 4500008004100000245006900041210006800110260000800178300001200186490000700198100002200205700002200227856004300249 1961 eng d00aDetailed Balance Limit of Efficiency of p-n Junction Solar Cells0 aDetailed Balance Limit of Efficiency of pn Junction Solar Cells bAIP a510-5190 v321 aShockley, William1 aQueisser, Hans, J uhttp://link.aip.org/link/?JAP/32/510/100512nas a2200133 4500008004100000022001400041245005100055210005100106260001600157300000800173490000700181100002200188856016800210 1961 eng d a0016-760600aKNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS0 aKNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS cJan-01-1961 a6210 v721 aROBERTSON, FORBES uhttps://pubs.geoscienceworld.org/gsabulletin/article/72/4/621-637/5310http://bulletin.geoscienceworld.org/cgi/doi/10.1130/0016-7606(1961)72%5B621:KHNFOM%5D2.0.CO;200378nas a2200121 4500008004100000245004000041210004000081260005600121300000700177100001200184700001900196856004100215 1960 eng d00aHigh efficiency silicon solar cells0 aHigh efficiency silicon solar cells bU.S. Army Signal Research and Development Labc1960 a221 aDale, B1 aRudenberg, H G uhttps://www.pveducation.org/node/29900297nas a2200097 4500008004100000245003700041210003600078260002900114100001500143856004100158 1959 eng d00aSemiconductor Devices, Chapter 80 aSemiconductor Devices Chapter 8 aNew JerseybVan Nostrand1 aShive, J N uhttps://www.pveducation.org/node/37900380nas a2200121 4500008004100000245006500041210006400106260001300170300001200183490000700195100001500202856004100217 1958 eng d00aMeasurement of sheet resistivities with the four-point probe0 aMeasurement of sheet resistivities with the fourpoint probe cMay 1958 a711-7180 v341 aSmits, F M uhttps://www.pveducation.org/node/38601700nas a2200145 4500008004100000245012000041210006900161260000800230300001600238490000800254520119600262100002201458700002101480856005301501 1958 eng d00aPhotoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors0 aPhotoconductivity of Zinc Selenide Crystals and a Correlation of cJun a1040–10490 v1103 aPhotosensitive crystals of zinc selenide have been prepared by incorporating suitable proportions of Group VII donors (e.g., bromine) and either Group I acceptors (copper or silver) or Group V acceptors (antimony or arsenic) in crystals prepared from the vapor phase. Photoconductivity phenomena characteristic of other II-VI photoconductors, such as (a) variation of photocurrent with a power of light intensity greater than unity, (b) temperature quenching of photoconductivity, and (c) infrared quenching of photoconductivity, are also found for zinc selenide. Sensitizing centers in ZnSe: Br: Cu and ZnSe: Br: Ag have levels lying at the same distance above the top of the valence band (0.6 ev) as sensitizing centers in CdSe, even though the band gap of ZnSe is 50% larger than that of CdSe. Crystals with Group V acceptors are characterized in addition by a long-wavelength spectral response, out to 1.4 microns, associated with levels lying about 1.3 ev above the top of the valence band. By a consideration of known data on the conductivity, photoconductivity, and luminescence of II-VI compounds, a consistent correlation of donor and acceptor levels in these materials is possible.1 aBube, Richard, H.1 aLind, Edward, L. uhttp://link.aps.org/doi/10.1103/PhysRev.110.104001630nas a2200145 4500008004100000022001300041245004500054210004500099260001600144300000800160490000700168520123800175100002001413856005101433 1957 eng d a0002950500aConversion of Solar to Electrical Energy0 aConversion of Solar to Electrical Energy cJan-01-1957 a5910 v253 aA photovoltaic device has been developed which converts solar radiation directly into electrical energy with an over-all efficiency of 11%. This consists of a p-n junction formed by gaseous diffusion near the front surface of a silicon plate. In full sunlight a single cell furnishes approximately 30 ma of short circuit current per square centimeter of surface, 0.6 v of open circuit voltage, and 12 mw of power into a matched load per square centimeter of surface. Like other electric batteries, individual cells may be connected in series or parallel to obtain an increase in terminal voltage or current. The spectral response is a maximum near 0.7 µ, and the long wavelength cutoff is at approximately 1.1 µ. The efficiency of this new siliconp-n junctionphotovoltaic cell is greater by a factor of 20 than that previously reported for other types of photocells and makes the conversion of the sun's energy directly into electricity possible for a number of interesting applications. A Bell System field trial at Americus, Georgia, in which solar batteries are used to power a rural carrier telephone communication system, is described. A number of other possible applications for this new solar energy converter are discussed.1 aPearson, G., L. uhttp://link.aip.org/link/?AJP/25/591/1&Agg=doi00224nas a2200073 4500008004100000245002900041210002900070856005100099 1955 eng d00aBell Laboratories Record0 aBell Laboratories Record uhttps://www.pveducation.org/reference/bell195500447nas a2200133 4500008004100000245009400041210006900135300001200204490000700216100001600223700001600239700001700255856004100272 1954 eng d00aA New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power0 aNew Silicon PN Junction Photocell for Converting Solar Radiation a676-6770 v251 aChapin, D M1 aFuller, C S1 aPearson, G L uhttps://www.pveducation.org/node/29300361nas a2200121 4500008004100000245004500041210004400086260003900130300000800169490000700177100001400184856004100198 1952 eng d00aElectron-Hole Recombination in Germanium0 aElectronHole Recombination in Germanium bAmerican Physical Societyc07/1952 a3870 v871 aHall, R N uhttps://www.pveducation.org/node/32400375nas a2200121 4500008004100000245006000041210006000101300001200161490000700173100001900180700001300199856004100212 1952 eng d00aPhotoelectric Properties of Tonically Bombarded Silicon0 aPhotoelectric Properties of Tonically Bombarded Silicon a802-8150 v311 aKingsbury, E F1 aOhl, R S uhttps://www.pveducation.org/node/34100850nas a2200133 4500008004100000245006000041210006000101300000800161490000700169520045300176100002200629700001400651856005100665 1952 eng d00aStatistics of the Recombinations of Holes and Electrons0 aStatistics of the Recombinations of Holes and Electrons a8350 v873 aThe statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.1 aShockley, William1 aRead, W T uhttp://link.aps.org/doi/10.1103/PhysRev.87.83500238nas a2200097 4500008004100000245001800041210001700059490000800076100001500084856004100099 1952 eng d00aZone-refining0 aZonerefining0 v1941 aPfann, W G uhttps://www.pveducation.org/node/36400384nam a2200097 4500008004100000245008600041210006900127260002700196100002200223856004100245 1950 eng d00aElectrons and holes in semiconductors with applications to transistor electronics0 aElectrons and holes in semiconductors with applications to trans aNew Yorkbvan Nostrand1 aShockley, William uhttps://www.pveducation.org/node/38001175nas a2200133 4500008004100000245007900041210006900120260001600189300001400205490000700219520070000226100001700926856009800943 1949 eng d00aThe theory of p-n Junctions in semiconductors and p-n junction transistors0 atheory of pn Junctions in semiconductors and pn junction transis cJan-07-1949 a435 - 4890 v283 aIn a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p ) 1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.1 aShockley, W. uhttp://doi.wiley.com/10.1002/bltj.1949.28.issue-3https://ieeexplore.ieee.org/document/677308000319nas a2200121 4500008004100000245003600041210003500077260001200112300001300124490000600137100001300143856004100156 1941 eng d00aLight-Sensitive Electric Device0 aLightSensitive Electric Device c05/1941 a402, 6020 v21 aOhl, R S uhttps://www.pveducation.org/node/35900325nas a2200121 4500008004100000245003900041210003700080300000800117490000700125100001300132700001700145856004100162 1939 eng d00aA Thallous Sulphide Photo EMF Cell0 aThallous Sulphide Photo EMF Cell a4570 v291 aNix, F C1 aTreptwo, A W uhttps://www.pveducation.org/node/35800485nas a2200133 4500008004100000022001300041245013000054210006900184260001600253300001400269490000800283100001900291856004100310 1934 eng d a0003380400aAbsolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen0 aAbsolutwerte der optischen Absorptionskonstanten von Alkalihalog cJan-01-1934 a434 - 4640 v4111 aBauer, Gerhard uhttps://www.pveducation.org/node/52900342nas a2200109 4500008004100000245006200041210005600103300000800159490000600167100001800173856004100191 1933 eng d00aThe Copper-Cuprous-Oxide Rectifier and Photoelectric Cell0 aCopperCuprousOxide Rectifier and Photoelectric Cell a1410 v51 aGrondahl, L O uhttps://www.pveducation.org/node/32300322nas a2200109 4500008004100000245005000041210004900091300000800140490000700148100001600155856004100171 1931 eng d00aUber eine neue Selen- Sperrschicht Photozelle0 aUber eine neue Selen Sperrschicht Photozelle a2860 v321 aBergmann, L uhttps://www.pveducation.org/node/28400370nas a2200109 4500008004100000245007600041210006900117300001200186490000800198100001300206856004100219 1923 eng d00aSur les rayons β secondaires produits dans un gaz par des rayons X0 aSur les rayons beta secondaires produits dans un gaz par des ray a169-1710 v1771 aAuger, P uhttps://www.pveducation.org/node/27600493nas a2200133 4500008004100000022001400041245003400055210003300089260001600122300001400138490000700152100001800159856018200177 1921 eng d a0025-557200aNote on the Equation, of Time0 aNote on the Equation of Time cJan-12-1921 a372 - 3750 v101 aMilne, R., M. uhttps://www.cambridge.org/core/product/identifier/S0025557200232944/type/journal_articlehttps://www.cambridge.org/core/services/aop-cambridge-core/content/view/S002555720023294400385nas a2200109 4500008004100000245008400041210006900125300001400194490000700208100001900215856004100234 1918 eng d00aEin neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle0 aEin neues Verfahren zur Messung der Kristallisationsgeschwindigh a219–2210 v921 aCzochralski, J uhttps://www.pveducation.org/node/29800342nas a2200121 4500008004100000245004300041210004300084260001200127490000700139653001700146100001600163856004100179 1905 eng d00aGeneration and transformation of light0 aGeneration and transformation of light c06/19050 v1710aEinstein19051 aEinstein, A uhttps://www.pveducation.org/node/30500334nas a2200121 4500008004100000245004300041210004300084260001200127300001200139490000600151100001400157856004100171 1901 eng d00aDistribution of energy in the spectrum0 aDistribution of energy in the spectrum c03/1901 a553-5630 v41 aPlanck, M uhttps://www.pveducation.org/node/36600324nas a2200109 4500008004100000245005000041210005000091300001200141490000600153100001400159856004100173 1900 eng d00aDistribution of energy in the normal spectrum0 aDistribution of energy in the normal spectrum a237-2450 v21 aPlanck, M uhttps://www.pveducation.org/node/36500298nas a2200109 4500008004100000245004000041210003500081300000800116490000700124100001600131856004100147 1883 eng d00aOn a New Form of Selenium Photocell0 aNew Form of Selenium Photocell a4650 v261 aFritts, C E uhttps://www.pveducation.org/node/31000316nas a2200121 4500008004100000245003600041210003200077300000800109490000800117100001500125700001300140856004100153 1877 eng d00aThe Action of Light on Selenium0 aAction of Light on Selenium a1130 vA251 aAdams, W G1 aDay, R E uhttps://www.pveducation.org/node/27300294nas a2200109 4500008004100000245003800041210003500079300000800114490000800122100001300130856004100143 1874 eng d00aOn Conductance in Metal Sulphides0 aConductance in Metal Sulphides a5560 v1531 aBraun, F uhttps://www.pveducation.org/node/28900389nas a2200109 4500008004100000245009000041210007100131300001000202490000700212100001900219856004100238 1841 eng d00aMemoire sur les effects d´electriques produits sous l´influence des rayons solaires0 aMemoire sur les effects d´electriques produits sous l´influence a35-420 v541 aBecquerel, A E uhttps://www.pveducation.org/node/28200409nas a2200109 4500008004100000245011100041210006900152300001200221490000600233100001900239856004100258 1839 eng d00aRecherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques0 aRecherches sur les effets de la radiation chimique de la lumiere a145-1490 v91 aBecquerel, A E uhttps://www.pveducation.org/node/28100270nas a2200073 4500008004000000245004400040210003900084856007300123 0 engd00aTITANIUM(IV) SULFIDE CAS No. 12039-13-30 aTITANIUMIV SULFIDE CAS No 12039133 uhttp://www.chemicalbook.com/ChemicalProductProperty_EN_CB2240473.htm