@article {Yoon2000,
	title = {Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate},
	journal = {Thin Solid Films},
	volume = {372},
	year = {2000},
	pages = {250 - 256},
	abstract = {The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200{\textdegree}C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent{\textendash}potential (I{\textendash}V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.},
	keywords = {XPS},
	issn = {0040-6090},
	doi = {http://dx.doi.org/10.1016/S0040-6090(00)01058-0},
	url = {http://www.sciencedirect.com/science/article/pii/S0040609000010580},
	author = {Ki Hyun Yoon and Woo Jin Choi and Dong Heon Kang}
}
