@article {Hanasoge2012, title = {From the Cover: Anomalously weak solar convection}, journal = {Proceedings of the National Academy of Sciences}, volume = {109}, year = {2012}, month = {Dec-07-2013}, pages = {11928 - 11932}, abstract = {Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree l. Within the wavenumber band l < 60, convective velocities are 20{\textendash}100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers l < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. }, issn = {0027-8424}, doi = {10.1073/pnas.1206570109}, author = {Hanasoge, S. M. and Duvall, T. L. and Sreenivasan, K. R.} } @article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @article {533, title = {Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics}, journal = {IEEE Journal of Photovoltaics}, volume = {2}, year = {2012}, month = {Jan-10-2012}, pages = {457 - 464}, issn = {2156-3381}, doi = {10.1109/JPHOTOV.2012.2206569}, author = {Baker-Finch, Simeon C. and McIntosh, Keith R. and Terry, Mason L.} } @conference {532, title = {OPAL 2: Rapid optical simulation of silicon solar cells}, booktitle = {2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference}, year = {2012}, publisher = {IEEE}, organization = {IEEE}, address = {Austin, TX, USA}, abstract = {The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the {\textquoteleft}isotexture{\textquoteright} of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.}, isbn = {978-1-4673-0064-3}, doi = {10.1109/PVSC.2012.6317616}, author = {McIntosh, Keith R. and Baker-Finch, Simeon C.} } @conference {Cousins2010, title = {Gen III: Improved Performance at Lower Cost}, booktitle = {35th IEEE Photovoltaic Specialists Conference}, year = {2010}, note = {
}, publisher = {IEEE}, organization = {IEEE}, address = {Honolulu, Hawaii}, author = {Peter J. Cousins and David D. Smith and Hsin-Chiao Luan and Jane Manning and Tim D. Dennis and Ann Waldhaue and Karen E. Wilson and Gabriel Harley and William P. Mulligan} } @article {NASA2010, title = {GISS Surface Temperature Analysis}, year = {2010}, note = {
}, url = {http://data.giss.nasa.gov/gistemp/graphs/}, author = {NASA} } @article {Fonash2009, title = {Solar Cell Device Physics}, year = {2010}, note = {

1. Introduction

2. Material Properties and Device Physics Basic to Photovoltaics

3. Structures, Materials, and Scale

4. Homojunction Solar Cells

5. Semiconductor-semiconductor Heterojunction Solar Cells

6. Surface-barrier Solar Cells

7. Dye-sensitized Solar Cells

Appendicies

}, pages = {400}, publisher = {Academic Press}, edition = {Second Edition}, isbn = {978-0-12-374774-7}, url = {http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books\&ie=UTF8\&qid=1279652144\&sr=1-1}, author = {Stephen J. Fonash} } @article {Green2010, title = {Solar cell efficiency tables (version 35)}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {18}, number = {2}, year = {2010}, note = {

Compendex

}, pages = {144{\textendash}150}, abstract = {

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

}, keywords = {Conversion efficiency, Energy conversion, solar cells, Solar energy, Solar power generation}, issn = {10627995}, url = {http://dx.doi.org/10.1002/pip.974}, author = {Martin A Green and Keith Emery and Yoshihiro Hishikawa and Wilhelm Warta} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @proceedings {Dimroth2009, title = {METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 \% EFFICIENCY}, year = {2009}, note = {
}, author = {F. Dimroth and W. Guter and J. Sch{\"o}ne and E. Welser and M. Steiner and E. Oliva and A. Wekkeli and G. Siefer and S.P. Philipps and A.W. Bett} } @article {Green2009, title = {The path to 25\% silicon solar cell efficiency: History of silicon cell evolution}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {17}, year = {2009}, note = {
}, pages = {183-189}, author = {Martin A Green} } @article {Wurfel2005, title = {Physics of Solar Cells}, year = {2009}, note = {

1. Problems of the Energy Economy

2. Photons

3. Semiconductors

4. Conversion of Thermal Radiation into Chemical Energy

5. Conversion of Chemical Energy into Electrical Energy

6. Basic Structure of Solar Cells

7. Limitations on Energy Conversion in Solar Cells

8. Concepts for Improving the Efficiency of Solar Cells

9. Prospects for the Future

Solutions

Appendix

References

Index

}, pages = {183}, publisher = {Wiley-VCH}, edition = {2nd, updated and expanded edition}, address = {M{\"o}rlenbach, Germany}, isbn = {978-3-527-40857-3}, url = {http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287}, author = {Peter W{\"u}rfel} } @article {Bremner2008, title = {Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {16}, number = {3}, year = {2008}, pages = {225{\textendash}233}, abstract = {

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright \© 2007 John Wiley \& Sons, Ltd.

}, doi = {10.1002/pip.799}, url = {http://dx.doi.org/10.1002/pip.799}, author = {S. P. Bremner and M. Y. Levy and Christiana B Honsberg} } @article {green_self-consistent_2008, title = {Self-consistent optical parameters of intrinsic silicon at 300~K including temperature coefficients}, journal = {Solar Energy Materials and Solar Cells}, volume = {92}, year = {2008}, pages = {1305{\textendash}1310}, abstract = {An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300\&\#xa0;K} are tabulated over the 0.25{\textendash}1.45\&\#xa0;μm wavelength range at 0.01\&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers{\textendash}Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {-24\&\#xa0;{\textdegree}C} to {200\&\#xa0;{\textdegree}C} range.}, keywords = {Absorption coefficient, optical properties, SILICON SOLAR CELLS}, issn = {0927-0248}, doi = {10.1016/j.solmat.2008.06.009}, url = {http://www.sciencedirect.com/science/article/pii/S0927024808002158}, author = {Martin A Green} } @article {Wenham2007, title = {Applied Photovoltaics}, year = {2007}, note = {

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

}, pages = {317}, publisher = {Earthscan}, address = {London, UK}, abstract = {
}, isbn = {1-84407-401-3}, url = {http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8\&s=books\&qid=1279558328\&sr=8-1}, author = {Wenham, S.R. and Martin A Green and Watt, M. E. and R. Corkish} } @proceedings {DeCeuster2007, title = {Low Cost, High Volume Production of >22\% Efficiency Silicon Solar Cells}, year = {2007}, note = {
}, author = {De Ceuster, D. and P. Cousins and D. Rose and M. Cudzinovic and W. Mulligan} } @article {Pysch2007, title = {A review and comparison of different methods to determine the series resistance of solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {91}, year = {2007}, note = {
}, month = {11/2007}, pages = {1698 - 1706}, issn = {09270248}, doi = {10.1016/j.solmat.2007.05.026}, author = {PYSCH, D and A. Mette and Stefan W. Glunz} } @article {Mette2007, title = {Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {15}, year = {2007}, note = {
}, pages = {493-505}, author = {A. Mette and et al} } @article {Hansen2006, title = {Global temperature change}, journal = {Proceedings of the National Academy of Sciences}, volume = {103}, year = {2006}, note = {
}, month = {09/2006}, pages = {14288 - 14293}, issn = {1091-6490}, doi = {10.1073/pnas.0606291103}, author = {Hansen, J.} } @conference {bunea_low_2006, title = {Low Light Performance of Mono-Crystalline Silicon Solar Cells}, booktitle = {4th World Conference on Photovoltaic Energy Conference}, year = {2006}, month = {2006}, pages = {1312{\textendash}1314}, address = {Waikoloa, HI}, doi = {10.1109/WCPEC.2006.279655}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885\&tag=1}, author = {Gabriela Bunea and Karen Wilson and Yevgeny Meydbray and Matthew Campbell and Denis De Ceuster} } @article {Levy2006, title = {Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications}, journal = {Solid-State Electronics}, volume = {50}, year = {2006}, pages = {1400-1405}, author = {M. Y. Levy and Christiana B Honsberg} } @book {Schroder2006, title = {Semiconductor material and device characterization}, year = {2006}, publisher = {IEEE Press; Wiley}, organization = {IEEE Press; Wiley}, edition = {3rd edition}, address = {Piscataway NJ; Hoboken N.J.}, isbn = {9780471739067}, author = {Dieter Schroder} } @proceedings {Swanson2005, title = {Approaching the 29\% limit efficiency of silicon solar cells}, year = {2005}, note = {
}, pages = {889-94}, publisher = {01/2005}, address = {Lake buena Vista, FL, USA}, author = {Richard M Swanson} } @article {Bothe2005, title = {Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {13}, year = {2005}, note = {
}, month = {06/2005}, pages = {287 - 296}, issn = {1099-159X}, doi = {10.1002/pip.586}, author = {Bothe, Karsten and Sinton, Ron and Jan Schmidt} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Goetzberger2005, title = {Photovoltaic Solar Energy Generation}, year = {2005}, note = {

1. What is Photovoltaics?

2. Physics of Solar Cells

3. Silicon Solar Cell Material and Technology

4. Crystalline Thin-Film Silicon

5. Other Materials, New Concepts

6. Solar Cells and Solar Modules

7. PV Systems

8. PV Systems Installation Possibilities

9. Environmental Impacts by PV Systems

10. Efficinecy and Performance of PV Systems

11. PV Markets Support Measures and Costs

12. The Future PV

13. Other (Perhaps Competing) CO2-Free Energy Sources

14. Popular Killing Arguments Against PV

References

Index

}, pages = {232}, publisher = {Springer}, address = {Berlin, Germany}, isbn = {3-540-23676-7}, url = {http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books\&ie=UTF8\&qid=1279649098\&sr=1-2}, author = {Adolf Goetzberger and Volker Uwe Hoffmann} } @article {Henrie2004, title = {Electronic color charts for dielectric films on silicon}, journal = {Optics Express}, volume = {12}, number = {7}, year = {2004}, note = {
}, pages = {1464{\textendash}1469}, abstract = {

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

}, keywords = {Color, measurement, optical properties, Thin films}, doi = {10.1364/OPEX.12.001464}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464}, author = {Justin Henrie and Spencer Kellis and Stephen Schultz and Aaron Hawkins} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {Luque2003, title = {Handbook of Photovoltaic Science and Engineering}, year = {2003}, note = {

1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics.\ 

2. Motivation for Photovoltaic Application and Development

3. The Physics of the Solar Cell

4. Theoretical Limits of Photovoltaic\ Conversion

5. Solar Grade Silicon Feedstock\ 

6. Bulk Crystal Growth and Wafering\ for PV

7. Crystalline Silicon Solar Cells and Modules\ 

8. Thin-film Silicon Solar Cells\ 

9. High-efficiency III-V Multijunction\ Solar Cells

10. Space Solar Cells and Arrays

11. Photovoltaic Concentrators\ 

12. Amorphous Silicon-based Solar Cells\ 

13. Cu(InGa)Se2 Solar Cells

14. Cadmium Telluride Solar Cells

15. Dye-sensitized Solar Cells

16. Measurement and Characterization of Solar Cells and Modules

17. Photovoltaic Systems

18. Electrochemical Storage for Photovoltaics

19. Power Conditioning for Photovoltaic Power Systems

20. Energy Collected and Delivered by PV Modules

21. Economic Analysis and Environmental Aspects of Photovoltaic\ Systems

22. PV in Architecture

23. Photovoltaics\ and Development

24. Financing PV Growth\ 

Index

}, pages = {1117}, publisher = {John Wiley \& Sons Ltd.}, address = {Chichester, England}, isbn = {0-471-49196-9}, url = {http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7}, author = {Luque, A. and Hegedus, S.} } @article {Nelson2003, title = {The Physics of Solar Cells}, year = {2003}, note = {

1. Introduction

2. Photons In, Electrons Out: Basic Principles of PV

3. Electrons and Holes and Semiconductors

4. Generation and Recombination

5. Junctions

6. Analysis of the p-n Junction

7. Monocrystalline Solar Cells

8. Thin Film Solar Cells

9. Managing Light

10. Over the Limit: Strategies for High Efficiency

Solutions

Index

}, pages = {355}, publisher = {Imperial College Press}, address = {London, UK}, abstract = {
}, isbn = {1-86094-340-3}, url = {http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497}, author = {Jenny Nelson} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Reda2003, title = {Solar Position Algorithm for Solar Radiation Applications}, number = {TP-560-34302, R}, year = {2003}, note = {
}, month = {2003}, author = {Reda, I and Andreas, A} } @article {Kerr2002, title = {General parameterization of Auger recombination in crystalline silicon}, journal = {Journal of Applied Physics}, volume = {91}, number = {4}, year = {2002}, pages = {2473-2480}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON}, doi = {10.1063/1.1432476}, url = {http://link.aip.org/link/?JAP/91/2473/1}, author = {Mark J Kerr and Andr{\'e}s Cuevas} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @article {Zhao2001, title = {24.5\% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates}, journal = {Solar Energy Materials and Solar Cells}, volume = {66}, year = {2001}, note = {
}, pages = {27 - 36}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00155-0}, author = {Zhao, J. and Aihua Wang and Martin A Green} } @article {BlancoMuriel2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, number = {5}, year = {2001}, note = {
}, pages = {431 - 441}, keywords = {Solar tracking}, issn = {0038-092X}, doi = {DOI: 10.1016/S0038-092X(00)00156-0}, url = {http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993}, author = {Manuel Blanco-Muriel and Diego C. Alarc{\'o}n-Padilla and Teodoro L{\'o}pez-Moratalla and Mart{\'I}n Lara-Coira} } @article {Glunz2001, title = {Degradation of carrier lifetime in Cz silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, number = {1-4}, year = {2001}, note = {
}, pages = {219 - 229}, keywords = {Defects}, issn = {0927-0248}, doi = {DOI: 10.1016/S0927-0248(00)00098-2}, url = {http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f}, author = {Stefan W. Glunz and S. Rein and W. Warta and J. Knobloch and W. Wettling} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @article {Altermatt2001, title = {Improvements in numerical modelling of highly injected crystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, pages = {149-155(7)}, abstract = {

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

}, url = {http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1}, author = {Pietro P Altermatt and Sinton, R.A. and G. Heiser} } @proceedings {Keogh2001, title = {Natural Sunlight Calibration of Silicon Solar Cells.}, year = {2001}, note = {
}, address = {Munich, Germany}, author = {W. Keogh and Andrew W Blakers} } @proceedings {Honsberg2001, title = {A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits}, year = {2001}, note = {
}, pages = {22-26}, author = {Christiana B Honsberg and R. Corkish and S. P. Bremner} } @conference {Bowden2001, title = {Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells}, booktitle = {17th European Photovoltaic Solar Energy Conference}, year = {2001}, month = {22/10/2001}, address = {Munich, Germany}, author = {S. Bowden and A. Rohatgi} } @article {Macdonald2001, title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon}, journal = {Journal of Applied Physics}, volume = {89}, number = {5}, year = {2001}, pages = {2772-2778}, publisher = {AIP}, keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells}, doi = {10.1063/1.1346652}, url = {http://link.aip.org/link/?JAP/89/2772/1}, author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas} } @mastersthesis {Anwar2000, title = {Aluminium Back Surface Field in Buried Contact Solar Cells}, volume = {Bachelor of Engineering}, year = {2000}, note = {
}, school = {University of New South Wales}, type = {masters}, author = {Anwar, K.K.} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @proceedings {McIntosh2000, title = {The Influence of Edge Recombination on a Solar Cell{\textquoteright}s IV Curve}, year = {2000}, note = {
}, author = {McIntosh, K. R. and Christiana B Honsberg} } @proceedings {vanderHeide2000, title = {Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques}, year = {2000}, note = {
}, pages = {1438}, address = {Glasgow (United Kingdom)}, author = {A.S.H. van der Heide and et al} } @proceedings {ONeil2000, title = {Outdoor measurement of 28\% efficiency for a mini-concentrator module}, year = {2000}, note = {
}, address = {Denver, USA}, author = {O{\textquoteright}Neil, M.J. and McDanal, A.J.} } @conference {Sinton2000, title = {A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization}, booktitle = {16th European Photovoltaic Solar Energy Conference}, year = {2000}, month = {05/2000}, pages = {1152{\textendash}1155}, address = {Glasgow, Scotland}, author = {Sinton, R.A. and Andr{\'e}s Cuevas} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @article {Markvart2000, title = {Solar Electricity}, year = {2000}, note = {

1. Electricity from the Sun

2. Solar Radiation

3. Solar Cells

4. Photovoltaic System Engineering

5. Applications

6. Environmental Impacts of Photovoltaics

7. Advanced and Special Topics

Index

}, pages = {271}, publisher = {John Wiley \& Sons}, edition = {Second Edition}, address = {Chichester, England}, isbn = {0-471-98853-7}, url = {http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books\&ie=UTF8\&qid=1279647029\&sr=1-1}, author = {Tomas Markvart} } @book {Streetman2001, title = {Solid State Electronic Devices}, year = {2000}, note = {
}, publisher = {Prentice Hall}, organization = {Prentice Hall}, author = {Ben G. Streetman} } @article {Nagel1999, title = {Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors}, journal = {Journal of Applied Physics}, volume = {86}, number = {11}, year = {1999}, pages = {6218-6221}, publisher = {AIP}, keywords = {carrier lifetime, photoconductivity}, doi = {10.1063/1.371633}, url = {http://link.aip.org/link/?JAP/86/6218/1}, author = {Henning Nagel and Christopher Berge and Armin G Aberle} } @proceedings {Zhao1998, title = {19.8\% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface}, year = {1998}, note = {
}, address = {Vienna, Austria}, author = {Zhao, J. and Wang, A. and Martin A Green} } @article {Zhao1991, title = {19.8\% efficient \"honeycomb\" textured multicrystalline and 24.4\% monocrystalline silicon solar cells}, journal = {Applied Physics Letters}, volume = {73}, number = {14}, year = {1998}, pages = {1991-1993}, publisher = {AIP}, keywords = {elemental semiconductors, SILICON, solar cells, surface texture}, doi = {10.1063/1.122345}, url = {http://link.aip.org/link/?APL/73/1991/1}, author = {Jianhua Zhao and Aihua Wang and Martin A Green and Francesca Ferrazza} } @proceedings {Ruby1998, title = {Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells}, year = {1998}, note = {
}, month = {07/1998}, address = {Vienna, Austria}, author = {Ruby, D. S. and Yang, P. and Zaidi, S. and Brueck, S. and Roy, M. and Narayanan, S.} } @article {Zhao1997, title = {20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {269{\textendash}276}, author = {Zhao, J. and Wang, A. and Yun, F. and Zhang, G. and Roche, D.M. and Wenham, S.R. and Martin A Green} } @proceedings {Einhaus1997, title = {Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions}, year = {1997}, note = {
}, pages = {167-170, 1451}, address = {New York, NY, USA}, author = {Einhaus, R. and Vazsonyi, E. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Szlufcik1997, title = {Low-cost industrial technologies of crystalline silicon solar cells}, volume = {85}, year = {1997}, note = {
}, pages = {711-730}, author = {Szlufcik, J. and Sivoththaman, S. and Nlis, J.F. and Mertens, R.P. and Van-Overstraeten, R.} } @article {Chandramohan1997, title = {Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications}, journal = {physica status solidi (a)}, volume = {163}, year = {1997}, month = {Jan-10-1997}, pages = {R11 - R12}, issn = {00318965}, doi = {10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3}, author = {Chandramohan, R. and Sanjeeviraja, C. and Mahalingam, T.} } @article {Hezel1997, title = {Recent progress in MIS solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {109-120}, author = {Hezel, R.} } @proceedings {Horzel1997, title = {A simple processing sequence for selective emitters}, year = {1997}, note = {
}, pages = {139-142}, address = {New York, NY, USA}, author = {Horzel, J. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Fukui1997, title = {Surface texturing using reactive ion etching for multicrystalline silicon solar cells}, year = {1997}, note = {
}, pages = {1451, 47-50}, address = {New York, NY, USA}, author = {Fukui, K. and Inomata, Y. and Shirasawa, K.} } @article {Sinton1996, title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data}, journal = {Applied Physics Letters}, volume = {69}, number = {17}, year = {1996}, pages = {2510-2512}, publisher = {AIP}, keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS}, doi = {10.1063/1.117723}, url = {http://link.aip.org/link/?APL/69/2510/1}, author = {Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Stocks1996, title = {Texturing of polycrystalline silicon}, journal = {Solar Energy Materials and Solar Cells}, volume = {40}, number = {1}, year = {1996}, pages = {33 - 42}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(95)00077-1}, url = {http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541}, author = {M. J. Stocks and A. J. Carr and Andrew W Blakers} } @article {Green1995, title = {Optical properties of intrinsic silicon at 300 K}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {3}, year = {1995}, note = {
}, month = {1995}, pages = {189 - 192}, issn = {1099159X}, doi = {10.1002/pip.4670030303}, author = {Martin A Green and Keevers, Mark J.} } @article {Baruch1995, title = {On some thermodynamic aspects of photovoltaic solar energy conversion}, journal = {Solar Energy Materials and Solar Cells}, volume = {36}, year = {1995}, pages = {201-222}, author = {Baruch, P. and De Vos, A. and Landsberg, P. T. and J.E. Parrott} } @article {Kerr1995, title = {Sun{\textquoteright}s Role in Warming Is Discounted}, journal = {Science}, volume = {268}, year = {1995}, note = {
}, month = {04/1995}, pages = {28 - 29}, issn = {1095-9203}, doi = {10.1126/science.268.5207.28}, author = {Kerr, R. A.} } @article {Verlinden1994, title = {7000 High Efficiency Cells for a Dream}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {143 - 152}, author = {Verlinden, P.J. and Richard M Swanson and Crane, R.A.} } @article {Durand1994, title = {Attaining Thirty-Year Photovoltaic System Lifetime}, journal = {Progress in Photovoltaics: Research and Applications}, year = {1994}, note = {
}, author = {Durand, S.} } @article {Jordan1994, title = {Buried contact concentrator solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {171-176}, author = {Jordan, D. and Nagle, J.P.} } @article {Basore1994, title = {Defining terms for crystalline silicon solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {177-179}, author = {Basore, P.A.} } @article {Robinson1994, title = {Departures from the principle of superposition in silicon solar cells}, journal = {Journal of Applied Physics}, volume = {76}, year = {1994}, note = {
}, month = {1994}, pages = {7920}, issn = {00218979}, doi = {10.1063/1.357902}, author = {Robinson, S. J. and Armin G Aberle and Martin A Green} } @article {Sproul1994, title = {Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors}, journal = {Journal of Applied Physics}, volume = {76}, number = {5}, year = {1994}, pages = {2851-2854}, publisher = {AIP}, keywords = {ANALYTICAL SOLUTION, carrier lifetime, DECAY, MINORITY CARRIERS, RECOMBINATION, SEMICONDUCTOR MATERIALS, SURFACES}, doi = {10.1063/1.357521}, url = {http://link.aip.org/link/?JAP/76/2851/1}, author = {A. B. Sproul} } @book {Ghandi1994, title = {{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition}, year = {1994}, publisher = {Wiley-Interscience}, organization = {Wiley-Interscience}, edition = {2}, isbn = {0471580058}, author = {Ghandhi, Sorab K.} } @article {Misiakos93, title = {Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K}, journal = {Journal of Applied Physics}, volume = {74}, year = {1993}, month = {Jan-01-1993}, pages = {3293}, abstract = {The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7{\textpm}0.1){\texttimes}10^9 cm-3.}, issn = {00218979}, doi = {10.1063/1.354551}, author = {Misiakos, Konstantinos and Tsamakis, Dimitris} } @article {Parrott1993, title = {Choice of an equivalent black body solar temperature}, journal = {Solar Energy}, volume = {51}, number = {3}, year = {1993}, note = {
}, month = {09/1993}, pages = {195 - 195}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(93)90096-7}, url = {http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6}, author = {J.E. Parrott} } @conference {Aberle1993, title = {A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells}, booktitle = {Proceedings of the 23rd IEEE Photovoltaic Specialists Conference}, year = {1993}, address = {Louisville, KY}, author = {Armin G Aberle and Wenham, S.R. and Martin A Green} } @article {Willeke1992, title = {A simple and effective light trapping technique for polycrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {26}, number = {4}, year = {1992}, pages = {345 - 356}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(92)90054-S}, url = {http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51}, author = {G. Willeke and H. Nussbaumer and H. Bender and E. Bucher} } @book {Green1992, title = {Solar Cells - Operating Principles, Technology and System Application}, year = {1992}, note = {
}, publisher = {University of NSW}, organization = {University of NSW}, address = {Kensington, Australia}, author = {Martin A Green} } @proceedings {Wohlgemuth1991, title = {Buried contact concentrator solar cells}, volume = {1}, year = {1991}, note = {
}, pages = {273-277}, author = {Wohlgemuth, J.H. and Narayanan, S.} } @proceedings {Wenger1991, title = {Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates}, year = {1991}, note = {
}, pages = {586-592}, address = {Las Vegas, USA}, author = {Wenger, H.J. and Schaefer, J. and Rosenthal, A. and Hammond, B. and Schlueter, L.} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, number = {2}, year = {1991}, note = {
}, pages = {846-854}, publisher = {AIP}, keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE}, doi = {10.1063/1.349645}, url = {http://link.aip.org/link/?JAP/70/846/1}, author = {A. B. Sproul and Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, year = {1991}, note = {
}, month = {1991}, pages = {846}, issn = {00218979}, doi = {10.1063/1.349645}, author = {A. B. Sproul and Martin A Green} } @proceedings {Zhao1991, title = {Improvements in Silicon Solar Cell Performance}, year = {1991}, note = {
}, pages = {399-402}, author = {Zhao, J. and Wang A. and Dai, X. and Martin A Green and Wenham, S.R.} } @book {Blakers1991, title = {The Role of Photovoltaics in Reducing Greenhouse Gas Emissions}, year = {1991}, note = {
}, publisher = {Australian Government Publishing Service}, organization = {Australian Government Publishing Service}, address = {Canberra}, author = {Andrew W Blakers and Martin A Green and T. Leo and H. Outhred and B. Robins} } @proceedings {King1991, title = {A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources}, year = {1991}, note = {
}, author = {King, D. and Hansen, B.} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Sproul1990, title = {Improved value for the silicon intrinsic carrier concentration at 300 K}, journal = {Applied Physics Letters}, volume = {57}, year = {1990}, note = {
}, month = {1990}, pages = {255}, issn = {00036951}, doi = {10.1063/1.103707}, author = {A. B. Sproul and Martin A Green and Zhao, J.} } @article {Wang1990, title = {Minority-carrier transport parameters in n-type silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {37}, year = {1990}, note = {
}, pages = {1314 - 1322}, issn = {00189383}, doi = {10.1109/16.108194}, author = {Wang, C.H. and Misiakos, K. and Neugroschel, A.} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271 - 289}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271{\textendash}289}, abstract = {

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

}, issn = {{0038-092X}}, doi = {10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {basore1990, title = {Numerical modeling of textured silicon solar cells using PC-1D}, journal = {Electron Devices, IEEE Transactions on}, volume = {37}, year = {1990}, month = {02/1990}, pages = {337 -343}, abstract = {PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells}, keywords = {elemental semiconductors, finite element analysis, finite-element program, front-surface recombination, heavy doping, high-level injection, internal performance, light trapping, microcomputer applications, modeling semiconductor devices, multidimensional effects, nonplanar structures, numerical models, oblique photon path angles, PC-1D, PC-1D Version 2, personal computers, semiconductor device models, semiconductors, Si, SILICON, solar cells, spectral quantum efficiency data, textured solar cells, transients}, issn = {0018-9383}, doi = {10.1109/16.46362}, author = {Basore, P.A.} } @proceedings {Green1990, title = {Photovoltaics: Coming of Age}, year = {1990}, note = {
}, month = {05/1990}, pages = {1-8}, address = {Orlando, USA}, abstract = {The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40\% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.}, doi = {10.1109/PVSC.1990.111582}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582}, author = {Martin A Green} } @article {Zolper1989, title = {16.7\% efficient, laser textured, buried contact polycrystalline silicon solar cell}, journal = {Applied Physics Letters}, volume = {55}, number = {22}, year = {1989}, pages = {2363}, issn = {00036951}, doi = {10.1063/1.102019}, url = {http://apl.aip.org/applab/v55/i22/p2363_s1}, author = {John C. Zolper and Srinivasamohan Narayanan and Stuart R. Wenham and Martin A Green} } @article {Kasten89, title = {Revised optical air mass tables and approximation formula}, journal = {Applied Optics}, volume = {28}, number = {22}, year = {1989}, note = {
}, month = {11/1989}, pages = {4735{\textendash}4738}, publisher = {OSA}, doi = {10.1364/AO.28.004735}, url = {http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735}, author = {Fritz Kasten and Andrew T. Young} } @booklet {Wenham1988, title = {Buried contact solar cell}, number = {4726850}, year = {1988}, note = {
}, month = {February}, url = {http://www.freepatentsonline.com/4726850.html}, author = {Stuart R. Wenham and Martin A Green} } @proceedings {Emery1988, title = {SOLAR SIMULATION - PROBLEMS AND SOLUTIONS}, year = {1988}, note = {
}, pages = {1087}, author = {Emery, K. and Myers, D. and Rummel, S.} } @article {Luke1987, title = {Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity}, journal = {Journal of Applied Physics}, volume = {61}, number = {6}, year = {1987}, pages = {2282-2293}, publisher = {AIP}, keywords = {carrier lifetime, LASERRADIATION HEATING, MINORITY CARRIERS, RECOMBINATION, SILICON, SILICON SOLAR CELLS, SURFACE PROPERTIES, THEORETICAL DATA, VELOCITY, WAFERS}, doi = {10.1063/1.337938}, url = {http://link.aip.org/link/?JAP/61/2282/1}, author = {Keung L. Luke and Li-Jen Cheng} } @article {Campbell1987, title = {Light trapping properties of pyramidally textured surfaces}, journal = {Journal of Applied Physics}, volume = {62}, year = {1987}, month = {Jan-01-1987}, pages = {243}, issn = {00218979}, doi = {10.1063/1.339189}, author = {Campbell, Patrick and Martin A Green} } @article {Sinton1987, title = {Recombination in highly injected silicon}, journal = {Electron Devices, IEEE Transactions on}, volume = {34}, number = {6}, year = {1987}, note = {
}, month = {jun}, pages = {1380 - 1389}, issn = {0018-9383}, author = {Sinton, R.A. and Richard M Swanson} } @article {Ross1986, title = {Flat-Plate Solar Array Project Final Report}, year = {1986}, note = {
}, pages = {86-31}, publisher = {Jet Propulsion Laboratory}, author = {Ross, R.G. Jnr. and Smokler, M.I.} } @article {Eades1985, title = {Calculation of surface generation and recombination velocities at the Si-SiO2 interface}, journal = {Journal of Applied Physics}, volume = {58}, year = {1985}, note = {
}, month = {1985}, pages = {4267}, issn = {00218979}, doi = {10.1063/1.335562}, author = {Eades, Wendell D. and Richard M Swanson} } @book {Sekuler1985, title = {Perception}, year = {1985}, note = {
}, publisher = {Alfred A. Knopf Inc}, organization = {Alfred A. Knopf Inc}, address = {New York}, author = {Sekuler, R. and Blake, R.} } @book {Feynman1985, title = {QED : The Strange Theory of Light and Matter}, series = {Princeton University Press, Princeton NJ}, year = {1985}, note = {
}, author = {Feynman, R. P.} } @article {Tiedje1984, title = {Limiting Efficiency of Silicon Solar Cells}, journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES}, volume = {ED-31}, year = {1984}, note = {
}, month = {05/1984}, author = {T. Tiedje and E Yablonovich and G.D. Cody and B.G. Brooks} } @book {seri1984, title = {Photovoltaics for Residential Applications}, year = {1984}, note = {
}, publisher = {Solar Energy Research Institute}, organization = {Solar Energy Research Institute}, address = {Golden, Colorado}, author = {SERI} } @article {Masetti1983, title = {Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-30}, number = {7}, year = {1983}, note = {

Copyright 1983, {IEE}

}, pages = {764{\textendash}9}, abstract = {

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

}, keywords = {arsenic, boron, CARRIER DENSITY, carrier mobility, digital simulation, elemental semiconductors, heavily doped semiconductors, phosphorus, SILICON}, issn = {0018-9383}, author = {G. Masetti and M. Severi and S. Solmi} } @article {Hu1983-2, title = {On Phosphorus Diffusion in Silicon}, journal = {On Phosphorus Diffusion in Silicon}, volume = {54}, year = {1983}, note = {
}, pages = {6912-6922}, author = {S.M. Hu and P. Fahey and P. Sutton} } @book {Hu1983, title = {Solar Cells: From Basic to Advanced Systems}, year = {1983}, note = {
}, publisher = {McGraw-Hill}, organization = {McGraw-Hill}, address = {New York}, author = {Hu, C and White, R.M.} } @inbook {Benjamin1983, title = {Voltaic Cell, Chapter XIV}, year = {1983}, note = {
}, publisher = {Wiley}, organization = {Wiley}, address = {New York}, author = {P. Benjamin} } @article {Green1982, title = {Accuracy of Analytical Expressions for Solar Cell Fill Factors}, journal = {Solar Cells}, volume = {7}, year = {1982}, note = {
}, pages = {337-340}, author = {Martin A Green} } @article {Yablonovich1982, title = {Intensity Enhancement in Textured Optical Sheets for Solar Cells}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-29}, year = {1982}, note = {
}, pages = {300-305}, author = {E Yablonovich and G.D. Cody} } @article {Green1982book, title = {Solar Cells: Operating Principles, Technology and System Applications}, year = {1982}, note = {

1. Solar Cells and Sunlight

2. Review of Semiconductor Properties

3. Generation, Recombination and the Basic Equation of Device Physics

4. p-n Junction Diodes

5. Efficiency Limits, Losses and Measurement

6. Standard Silicon Solar Cell Technology

7. Improved Silicon Cell Technology

8. Design of Silicon Solar Cells

9. Other Device Structures

10. Other Semiconductor Materials

11.Concentrating Systems

12. Photovoltaic Systems: Components and Applications

13. Design of Stand-alone Systems

14. Residential and Centralised Photovoltaic Power Systems

Appendix A: Physical Constants

Appendix B: Selected Properties of Silicon

Appendix C: List of Symbols

}, pages = {274}, publisher = {Prentice-Hall}, abstract = {
}, isbn = {0-85823-580-3}, author = {Martin A Green} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Green1981, title = {Solar cell fill factors: General graph and empirical expressions}, journal = {Solid-State Electronics}, volume = {24}, year = {1981}, note = {
}, pages = {788 - 789}, issn = {00381101}, doi = {10.1016/0038-1101(81)90062-9}, author = {Martin A Green} } @proceedings {Ross1980, title = {Flat-Plate Photovoltaic Array Design Optimization}, year = {1980}, note = {
}, pages = {1126-1132}, address = {San Diego, CA}, author = {Ross, R.G.} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @inbook {Rai1980, title = {Solar Energy Utilisation}, year = {1980}, note = {
}, pages = {44}, publisher = {Khanna Publishers}, organization = {Khanna Publishers}, author = {G.D. Rai} } @article {Lindholm1979, title = {Application of the superposition principle to solar-cell analysis}, journal = {IEEE Transactions on Electron Devices}, volume = {26}, number = {3}, year = {1979}, pages = {165{\textendash}171}, abstract = {The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).}, issn = {0018-9383}, author = {F.A. Lindholm and Fossum, J.G. and E.L. Burgess} } @article {Mack1979, title = {Solar Power for Telecommunications}, journal = {The Telecommunication Journal of Australia}, volume = {29}, year = {1979}, note = {
}, pages = {20-44}, author = {Mack, M.} } @booklet {Bailey1979, title = {United States Patent: 4137123 - Texture etching of silicon: method}, year = {1979}, abstract = {

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

}, url = {http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2\&Sect2=HITOFF\&p=1\&u=\%2Fnetahtml\%2FPTO\%2Fsearch-bool.html\&r=32\&f=G\&l=50\&co1=AND\&d=PTXT\&s1=4,137,123\&OS=4,137,123\&RS=4,137,123}, author = {William L. Bailey and Michael G. Coleman and Cynthia B. Harris and Israel A. Lesk} } @proceedings {Serreze1978, title = {Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations}, year = {1978}, note = {
}, pages = {1-8}, address = {Washington, D.C., USA}, author = {H.B. Serreze} } @article {Card1977, title = {Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-24}, year = {1977}, note = {
}, pages = {397-402}, author = {Card, H.C. and Yang, E.S.} } @article {Fossum1977, title = {Physical operation of back-surface-field silicon solar cells}, journal = {IEEE Transactions on Electron Devices}, volume = {24}, number = {4}, year = {1977}, month = {04/1977}, pages = {322 - 325}, abstract = {

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

}, issn = {0018-9383}, author = {Fossum, J.G.} } @book {Meinel1976, title = {Applied Solar Energy}, year = {1976}, note = {
}, publisher = {Addison Wesley Publishing Co.}, organization = {Addison Wesley Publishing Co.}, author = {Meinel, A.B. and Meinel, M.P.} } @proceedings {Wolf1976, title = {Historical Development of Solar Cells}, year = {1976}, note = {
}, publisher = {IEEE Press}, author = {M. Wolf} } @book {Backus1976, title = {Solar Cells}, year = {1976}, note = {
}, pages = {512}, publisher = {IEEE}, organization = {IEEE}, chapter = {3}, address = {New York}, abstract = {

The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells

}, author = {C.E. Backus} } @article {VantHull1976, title = {Solar thermal power system based on optical transmission}, journal = {Solar Energy}, volume = {18}, number = {1}, year = {1976}, note = {
}, pages = {31 - 39}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(76)90033-5}, url = {http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498}, author = {L.L. Vant-Hull and A.F. Hildebrandt} } @proceedings {Wang1973, title = {Optimum Design of Anti-reflection coating for silicon solar cells}, year = {1973}, note = {
}, pages = {168-171}, author = {E.Y. Wang and F.T.S. Yu and V.L. Sims and E.W. Brandhorst and J.D. Broder} } @article {531, title = {High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing}, journal = {Journal of Applied Physics}, volume = {42}, year = {1971}, month = {Jan-01-1971}, pages = {1204}, abstract = {Electron mobility in ZnSe has been measured between 40{\textdegree} and 400{\textdegree}K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2/V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.}, issn = {00218979}, doi = {10.1063/1.1660167}, author = {Aven, M.} } @article {Laue1970, title = {The measurement of solar spectral irradiance at different terrestrial elevations}, journal = {Solar Energy}, volume = {13}, number = {1}, year = {1970}, note = {
}, pages = {43 - 50, IN1-IN4, 51-57}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(70)90006-X}, url = {http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a}, author = {E.G. Laue} } @article {Cooper1969, title = {The absorption of radiation in solar stills}, journal = {Solar Energy}, volume = {12}, number = {3}, year = {1969}, note = {
}, pages = {333 - 346}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(69)90047-4}, url = {http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5}, author = {P.I. Cooper} } @article {Pliskin1964, title = {Nondestructive determination of thickness and refractive index of transparent films}, journal = {IBM Journal of Research Devices}, volume = {8}, number = {1}, year = {1964}, note = {
}, pages = {43{\textendash}51}, abstract = {

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[\ΔN\λ]/[2\µ(cos} r2, - cos r1)], where \λ is the wavelength of the filtered light, \µ is the refractive index, and {\ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

}, url = {http://portal.acm.org/citation.cfm?id=1662391}, author = {W. A. Pliskin and E. E. Conrad} } @article {Wolf1963, title = {Series Resistance Effects on Solar Cell Measurements}, journal = {Advanced Energy Conversion}, volume = {3}, year = {1963}, author = {M. Wolf and H. Rauschenbach} } @article {Shockley1961, title = {Detailed Balance Limit of Efficiency of p-n Junction Solar Cells}, journal = {Journal of Applied Physics}, volume = {32}, number = {3}, year = {1961}, pages = {510-519}, publisher = {AIP}, doi = {10.1063/1.1736034}, url = {http://link.aip.org/link/?JAP/32/510/1}, author = {William Shockley and Hans J. Queisser} } @conference {Dale1960, title = {High efficiency silicon solar cells}, booktitle = {Proceedings of the 14th Annual Power Sources Conference}, year = {1960}, note = {
}, month = {1960}, pages = {22}, publisher = {U.S. Army Signal Research and Development Lab}, organization = {U.S. Army Signal Research and Development Lab}, author = {B. Dale and H.G. Rudenberg} } @inbook {Shive1959, title = {Semiconductor Devices, Chapter 8}, year = {1959}, note = {
}, publisher = {Van Nostrand}, organization = {Van Nostrand}, address = {New Jersey}, author = {J.N. Shive} } @article {Smits1958, title = {Measurement of sheet resistivities with the four-point probe}, journal = {Bell System Technical Journal}, volume = {34}, year = {1958}, note = {
}, month = {May 1958}, pages = {711-718}, author = {F.M. Smits} } @article {Chapin1954, title = {A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power}, journal = {Journal of Applied Physics}, volume = {25}, year = {1954}, note = {
}, pages = {676-677}, author = {Chapin, D.M. and Fuller, C.S. and Pearson, G.L.} } @article {Hall1952, title = {Electron-Hole Recombination in Germanium}, journal = {Phys. Rev.}, volume = {87}, number = {2}, year = {1952}, note = {
}, month = {07/1952}, pages = {387}, publisher = {American Physical Society}, doi = {10.1103/PhysRev.87.387}, author = {Hall, R. N.} } @article {Kingsbury1952, title = {Photoelectric Properties of Tonically Bombarded Silicon}, journal = {Bell Systems Technical Journal}, volume = {31}, year = {1952}, note = {
}, pages = {802-815}, author = {Kingsbury, E.F. and Ohl, R.S.} } @article {Shockley1952, title = {Statistics of the Recombinations of Holes and Electrons}, journal = {Physical Review}, volume = {87}, number = {5}, year = {1952}, pages = {835}, abstract = {The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.}, doi = {10.1103/PhysRev.87.835}, url = {http://link.aps.org/doi/10.1103/PhysRev.87.835}, author = {William Shockley and W. T. Read} } @article {Pfann1952, title = {Zone-refining}, journal = {Trans. AIME,}, volume = {194}, year = {1952}, note = {
}, chapter = {747}, author = {W. G. Pfann} } @book {shockley1950, title = {Electrons and holes in semiconductors with applications to transistor electronics}, year = {1950}, publisher = {van Nostrand}, organization = {van Nostrand}, address = {New York}, author = {William Shockley} } @article {Ohl1941, title = {Light-Sensitive Electric Device}, journal = {U.S. Patent}, volume = {2}, year = {1941}, note = {
}, month = {05/1941}, pages = {402, 602}, author = {Ohl, R.S.} } @article {Nix1939, title = {A Thallous Sulphide Photo EMF Cell}, journal = {Journal Opt. Society of America}, volume = {29}, year = {1939}, note = {
}, pages = {457}, author = {Nix, F.C. and Treptwo, A.W.} } @article {Bauer1934, title = {Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen}, journal = {Annalen der Physik}, volume = {411}, year = {1934}, month = {Jan-01-1934}, pages = {434 - 464}, issn = {00033804}, doi = {10.1002/(ISSN)1521-388910.1002/andp.v411:410.1002/andp.19344110405}, author = {Bauer, Gerhard} } @article {Grondahl1933, title = {The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell}, journal = {Review of Modern Physics}, volume = {5}, year = {1933}, note = {
}, pages = {141}, author = {Grondahl, L.O.} } @article {Bergmann1931, title = {Uber eine neue Selen- Sperrschicht Photozelle}, journal = {Physikalische Zeitschrift}, volume = {32}, year = {1931}, note = {
}, pages = {286}, author = {Bergmann, L.} } @article {Auger1923, title = {Sur les rayons \β secondaires produits dans un gaz par des rayons X}, journal = {C.R.A.S.}, volume = {177}, year = {1923}, note = {
}, pages = {169-171}, author = {P. Auger} } @article {Czochralski1918, title = {Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle}, journal = {Zeitschrift f{\"u}r physikalische Chemie}, volume = {92}, year = {1918}, pages = {219{\textendash}221}, author = {Czochralski, J.} } @article {Einstein1905, title = {Generation and transformation of light}, journal = {Annalen der Physik}, volume = {17}, year = {1905}, note = {
}, month = {06/1905}, chapter = {132}, keywords = {Einstein1905}, author = {A. Einstein} } @article {Planck1901, title = {Distribution of energy in the spectrum}, journal = {Annalen der Physik}, volume = {4}, year = {1901}, note = {
}, month = {03/1901}, pages = {553-563}, author = {M. Planck} } @article {Planck1900, title = {Distribution of energy in the normal spectrum}, journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, volume = {2}, year = {1900}, note = {
}, pages = {237-245}, author = {M. Planck} } @article {Fritts1883, title = {On a New Form of Selenium Photocell}, journal = {American J. of Science}, volume = {26}, year = {1883}, note = {
}, pages = {465}, author = {Fritts, C.E.} } @article {Adams1877, title = {The Action of Light on Selenium}, journal = {Proceedings of the Royal Society, London}, volume = {A25}, year = {1877}, note = {
}, pages = {113}, author = {Adams, W.G. and Day, R.E.} } @article {Braun1874, title = {On Conductance in Metal Sulphides}, journal = {Ann. d. Physik}, volume = {153}, year = {1874}, note = {
}, pages = {556}, author = {Braun, F.} } @article {Becquerel1841, title = {Memoire sur les effects d{\textasciiacute}electriques produits sous l{\textasciiacute}influence des rayons solaires}, journal = {Annalen der Physick und Chemie}, volume = {54}, year = {1841}, note = {
}, pages = {35-42}, author = {Becquerel, A.E.} } @article {Becquerel1839, title = {Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques}, journal = {Comptes Rendus de L{\textasciiacute}Academie des Sciences}, volume = {9}, year = {1839}, note = {
}, pages = {145-149}, author = {Becquerel, A.E.} }