@article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {altermatt2002, title = {Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling}, journal = {Solar Energy Materials and Solar Cells}, volume = {71}, year = {2002}, month = {Jan-02-2002}, pages = {181 - 195}, issn = {09270248}, doi = {10.1016/S0927-0248(01)00053-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain} } @article {Altermatt2001, title = {Improvements in numerical modelling of highly injected crystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, pages = {149-155(7)}, abstract = {

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

}, url = {http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1}, author = {Pietro P Altermatt and Sinton, R.A. and G. Heiser} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} }