01369nas a2200169   4500008004100000022001300041245010100054210006900155260000900224300000800233490000700241520084700248100001801095700002001113700002201133856004401155       2002                        eng d  a0021897900aGeneralized analysis of quasi-steady-state and transient decay open circuit voltage measurements0 aGeneralized analysis of quasisteadystate and transient decay ope  c2002  a3990 v913 aThe current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.1 aKerr, Mark, J1 aCuevas, Andrés1 aSinton, Ronald, A  uhttps://www.pveducation.org/ko/node/338