TY - ABST T1 - United States Patent: 4137123 - Texture etching of silicon: method Y1 - 1979 A1 - William L. Bailey A1 - Michael G. Coleman A1 - Cynthia B. Harris A1 - Israel A. Lesk AB -

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 KW - Bailey1979 ER -