@conference {nakamura2014recent, title = {Recent R\&D progress in solar frontier{\textquoteright}s small-sized Cu (InGa)(SeS)2 solar cells}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)}, year = {2014}, publisher = {IEEE}, organization = {IEEE}, author = {Nakamura, Motoshi and Yoneyama, Nobutaka and Horiguchi, Kyouhei and Iwata, Yasuaki and Yamaguchi, Koji and Sugimoto, Hiroki and Kato, Takuya} } @article {Cuevas2014, title = {The Recombination Parameter J0}, journal = {Energy Procedia}, volume = {55}, year = {2014}, month = {Jan-01-2014}, pages = {53 - 62}, abstract = {The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter.}, issn = {18766102}, doi = {10.1016/j.egypro.2014.08.073}, url = {http://www.sciencedirect.com/science/article/pii/S1876610214012971$\#$}, author = {Andr{\'e}s Cuevas} } @article {g2008, title = {REST2: High-performance solar radiation model for cloudless-sky irradiance, illuminance, and photosynthetically active radiation {\textendash} Validation with a benchmark dataset}, journal = {Solar Energy}, volume = {82}, year = {2008}, month = {Jan-03-2008}, pages = {272 - 285}, issn = {0038092X}, doi = {10.1016/j.solener.2007.04.008}, url = {https://linkinghub.elsevier.com/retrieve/pii/S0038092X07000990https://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/plain}, author = {Gueymard, Christian A.} } @article {Pysch2007, title = {A review and comparison of different methods to determine the series resistance of solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {91}, year = {2007}, note = {
}, month = {11/2007}, pages = {1698 - 1706}, issn = {09270248}, doi = {10.1016/j.solmat.2007.05.026}, author = {PYSCH, D and A. Mette and Stefan W. Glunz} } @article {Levy2006, title = {Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications}, journal = {Solid-State Electronics}, volume = {50}, year = {2006}, pages = {1400-1405}, author = {M. Y. Levy and Christiana B Honsberg} } @article {Anandan2005, title = {Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells}, journal = {Materials Chemistry and Physics}, volume = {93}, year = {2005}, month = {Jan-09-2005}, pages = {35 - 40}, issn = {02540584}, doi = {10.1016/j.matchemphys.2005.02.002}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0254058405001197}, author = {Anandan, Sambandam and Wen, Xiaogang and Yang, Shihe} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @conference {Bowden2001, title = {Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells}, booktitle = {17th European Photovoltaic Solar Energy Conference}, year = {2001}, month = {22/10/2001}, address = {Munich, Germany}, author = {S. Bowden and A. Rohatgi} } @article {Hezel1997, title = {Recent progress in MIS solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {109-120}, author = {Hezel, R.} } @book {Blakers1991, title = {The Role of Photovoltaics in Reducing Greenhouse Gas Emissions}, year = {1991}, note = {
}, publisher = {Australian Government Publishing Service}, organization = {Australian Government Publishing Service}, address = {Canberra}, author = {Andrew W Blakers and Martin A Green and T. Leo and H. Outhred and B. Robins} } @article {Kasten89, title = {Revised optical air mass tables and approximation formula}, journal = {Applied Optics}, volume = {28}, number = {22}, year = {1989}, note = {
}, month = {11/1989}, pages = {4735{\textendash}4738}, publisher = {OSA}, doi = {10.1364/AO.28.004735}, url = {http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735}, author = {Fritz Kasten and Andrew T. Young} } @article {Sinton1987, title = {Recombination in highly injected silicon}, journal = {Electron Devices, IEEE Transactions on}, volume = {34}, number = {6}, year = {1987}, note = {
}, month = {jun}, pages = {1380 - 1389}, issn = {0018-9383}, author = {Sinton, R.A. and Richard M Swanson} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Becquerel1839, title = {Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques}, journal = {Comptes Rendus de L{\textasciiacute}Academie des Sciences}, volume = {9}, year = {1839}, note = {
}, pages = {145-149}, author = {Becquerel, A.E.} }