@article {jackson2016effects, title = {Effects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6\%}, journal = {physica status solidi (RRL){\textendash}Rapid Research Letters}, volume = {10}, year = {2016}, pages = {583{\textendash}586}, author = {Jackson, Philip and Wuerz, Roland and Hariskos, Dimitrios and Lotter, Erwin and Witte, Wolfram and Powalla, Michael} } @article {Park2011, title = {Effects of electrical contacts on the photoconductive gain of nanowire photodetectors}, journal = {Applied Physics Letters}, volume = {99}, year = {2011}, month = {Jan-01-2011}, pages = {143110}, issn = {00036951}, doi = {10.1063/1.3647559}, url = {http://link.aip.org/link/APPLAB/v99/i14/p143110/s1\&Agg=doi}, author = {Park, Hongsik and Kim, Jin Ho and Beresford, Roderic and Xu, Jimmy} } @article {Liu2011, title = {Electronic structure of TiS2 and its electric transport properties under high pressure}, journal = {Journal of Applied Physics}, volume = {109}, year = {2011}, month = {Jan-01-2011}, pages = {053717}, issn = {00218979}, doi = {10.1063/1.3552299}, url = {http://link.aip.org/link/JAPIAU/v109/i5/p053717/s1\&Agg=doi}, author = {Liu, Bao and Yang, Jie and Han, Yonghao and Hu, Tingjing and Ren, Wanbin and Liu, Cailong and Ma, Yanzhang and Gao, Chunxiao} } @article {Serin2011, title = {Extraction of important electrical parameters of CuO}, journal = {Physica B: Condensed Matter}, volume = {406}, year = {2011}, month = {Jan-02-2011}, pages = {575 - 578}, issn = {09214526}, doi = {10.1016/j.physb.2010.11.044}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0921452610010999}, author = {Serin, T. and Yildiz, A. and {\c S}ahin, {\c S}. and Serin, N.} } @article {lehner2008, title = {Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni}, journal = {Journal of The Electrochemical Society}, volume = {155}, year = {2008}, month = {Jan-01-2008}, pages = {P61}, issn = {00134651}, doi = {10.1149/1.2885103}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.2885103}, author = {Lehner, Stephen and Ciobanu, Madalina and Savage, Kaye and Cliffel, David E.} } @article {Park2007, title = {Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors}, journal = {Electrochemical and Solid-State Letters}, volume = {10}, year = {2007}, month = {Jan-01-2007}, pages = {H340}, issn = {10990062}, doi = {10.1149/1.2774683}, url = {http://esl.ecsdl.org/cgi/doi/10.1149/1.2774683}, author = {Park, Jeong-Woo and Baeg, Kang-Jun and Ghim, Jieun and Kang, Seok-Ju and Park, Jeong-Ho and Kim, Dong-Yu} } @article {Koteeswara2005, title = {Electrical properties of spray pyrolytic tin sulfide films}, journal = {Solid-State Electronics}, volume = {49}, year = {2005}, month = {Jan-06-2005}, pages = {902 - 906}, abstract = {Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100{\textendash}450 {\textdegree}C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300{\textendash}375 {\textdegree}C, were found to be p-type conducting. These SnS films showed average electrical resistivity of \~{}30 Ω cm, Hall mobility of \~{}130 cm2/V s and carrier density, >1015 cm-3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported.}, issn = {00381101}, doi = {10.1016/j.sse.2005.03.003}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038110105000845}, author = {Koteeswara Reddy, N. and Ramakrishna Reddy, K.T.} } @article {Henrie2004, title = {Electronic color charts for dielectric films on silicon}, journal = {Optics Express}, volume = {12}, number = {7}, year = {2004}, note = {
}, pages = {1464{\textendash}1469}, abstract = {

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

}, keywords = {Color, measurement, optical properties, Thin films}, doi = {10.1364/OPEX.12.001464}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464}, author = {Justin Henrie and Spencer Kellis and Stephen Schultz and Aaron Hawkins} } @article {Jain2004, title = {Exact analytical solutions of the parameters of real solar cells using Lambert W-function}, journal = {Solar Energy Materials and Solar Cells}, volume = {81}, year = {2004}, month = {Jun-02-2004}, pages = {269 - 277}, issn = {09270248}, doi = {10.1016/j.solmat.2003.11.018}, url = {https://linkinghub.elsevier.com/retrieve/pii/S0927024803002605https://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/plain}, author = {Jain, A} } @article {rudmann2003effects, title = {Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films}, journal = {Thin Solid Films}, volume = {431}, year = {2003}, pages = {37{\textendash}40}, author = {Rudmann, D and Bilger, G and Kaelin, M and Haug, F-J and Zogg, H and Tiwari, AN} } @article {Imai2003, title = {Electronic structures of semiconducting alkaline-earth metal silicides}, journal = {Journal of Alloys and Compounds}, volume = {358}, year = {2003}, month = {Jan-08-2003}, pages = {257 - 263}, issn = {09258388}, doi = {10.1016/S0925-8388(03)00037-9}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0925838803000379}, author = {Imai, Yoji and Watanabe, Akio and Mukaida, Masakazu} } @article {wei1999effects, title = {Effects of Na on the electrical and structural properties of CuInSe2}, journal = {Journal of Applied Physics}, volume = {85}, year = {1999}, pages = {7214{\textendash}7218}, author = {Wei, Su-Huai and Zhang, SB and Zunger, Alex} } @article {Xu1993, title = {Electronic, optical, and structural properties of some wurtzite crystals}, journal = {Physical Review B}, volume = {48}, year = {1993}, month = {Jan-08-1993}, pages = {4335 - 4351}, issn = {0163-1829}, doi = {10.1103/PhysRevB.48.4335}, url = {http://link.aps.org/doi/10.1103/PhysRevB.48.4335}, author = {Xu, Yong-Nian and Ching, W.} } @article {ito1998, title = {Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films}, journal = {Japanese Journal of Applied Physics}, volume = {27}, year = {1988}, month = {Aug-11-1989}, pages = {2094 - 2097}, issn = {0021-4922}, doi = {10.1143/JJAP.27.2094}, url = {http://stacks.iop.org/1347-4065/27/2094}, author = {Ito, Kentaro and Nakazawa, Tatsuo} } @article {560, title = {On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon}, journal = {Journal of The Electrochemical Society}, volume = {131}, year = {1984}, month = {Jan-01-1984}, pages = {2128}, abstract = {The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hall model of recombination at shallow traps and donor-acceptor pairs formation. }, issn = {00134651}, doi = {10.1149/1.2116033}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033}, author = {Pizzini, S. and Calligarich, C.} } @article {Irie1979, title = {Electrical Properties of p- and n-Type CuInSe 2 Single Crystals}, journal = {Japanese Journal of Applied Physics}, volume = {18}, year = {1979}, month = {Jan-07-1979}, pages = {1303 - 1310}, issn = {0021-4922}, doi = {10.1143/JJAP.18.1303}, url = {http://jjap.jsap.jp/link?JJAP/18/1303/}, author = {Irie, Taizo and Endo, Saburo and Kimura, Shigeo} } @article {Heikens1978, title = {Electrical properties of α-MnS}, journal = {Journal of Physics and Chemistry of Solids}, volume = {39}, year = {1978}, month = {Jan-01-1978}, pages = {833 - 840}, abstract = {Electrical data including thermoelectric power, Hall effect and resistivity on iodine-grown crystals of p-type α-MnS are reported. A study of the temperature dependences reveals that the conductivity occurs by holes in a 3d-band (Mn3+) and that the mobility of the holes is not thermally activated. Photoelectron spectra confirm the 3d character of the top of the valence band. Accurate analysis of the electrical data gives a satisfactory explanation of the extrinsic and intrinsic behaviour; the simultaneous presence of donors (substitutional iodine) and acceptors (manganese vacancies) is responsible for the observed phenomena.}, issn = {00223697}, doi = {10.1016/0022-3697(78)90141-5}, url = {http://linkinghub.elsevier.com/retrieve/pii/0022369778901415}, author = {Heikens, H.H. and Van Bruggen, C.F. and Haas, C.} } @article {Card1977, title = {Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-24}, year = {1977}, note = {
}, pages = {397-402}, author = {Card, H.C. and Yang, E.S.} } @article {jones1976, title = {The electrical properties of zinc selenide}, journal = {Journal of Physics D: Applied Physics}, volume = {9}, year = {1976}, month = {Jan-04-1976}, pages = {799 - 810}, issn = {0022-3727}, doi = {10.1088/0022-3727/9/5/013}, url = {http://stacks.iop.org/0022-3727/9/i=5/a=013?key=crossref.d0fe6103237fcfbfd2221126652bc33b}, author = {Jones, G and Woods, J} } @article {Conroy1968, title = {Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide}, journal = {Inorganic Chemistry}, volume = {7}, year = {1968}, month = {Jan-03-1968}, pages = {459 - 463}, issn = {0020-1669}, doi = {10.1021/ic50061a015}, url = {http://pubs.acs.org/doi/abs/10.1021/ic50061a015}, author = {Conroy, Lawrence E. and Park, Kyu Chang} } @article {Vazquez1968, title = {Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn}, journal = {Physical Review}, volume = {176}, year = {1968}, month = {Jan-12-1968}, pages = {905 - 908}, issn = {0031-899X}, doi = {10.1103/PhysRev.176.905}, url = {http://link.aps.org/doi/10.1103/PhysRev.176.905}, author = {Vazquez, F. and Forman, Richard and Cardona, Manuel} } @article {simmons1963, title = {Elastic Constants of Pyrite}, journal = {Journal of Applied Physics}, volume = {34}, year = {1963}, month = {Jan-09-1963}, pages = {2736 - 2738}, issn = {0021-8979}, doi = {10.1063/1.1729801}, url = {http://aip.scitation.org/doi/10.1063/1.1729801http://aip.scitation.org/doi/pdf/10.1063/1.1729801}, author = {Simmons, Gene and Birch, Francis} } @article {Hall1952, title = {Electron-Hole Recombination in Germanium}, journal = {Phys. Rev.}, volume = {87}, number = {2}, year = {1952}, note = {
}, month = {07/1952}, pages = {387}, publisher = {American Physical Society}, doi = {10.1103/PhysRev.87.387}, author = {Hall, R. N.} } @book {shockley1950, title = {Electrons and holes in semiconductors with applications to transistor electronics}, year = {1950}, publisher = {van Nostrand}, organization = {van Nostrand}, address = {New York}, author = {William Shockley} } @article {Czochralski1918, title = {Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle}, journal = {Zeitschrift f{\"u}r physikalische Chemie}, volume = {92}, year = {1918}, pages = {219{\textendash}221}, author = {Czochralski, J.} }