@article {Shockley1949,
	title = {The theory of p-n Junctions in semiconductors and p-n junction transistors},
	journal = {Bell System Technical Journal},
	volume = {28},
	year = {1949},
	month = {Jan-07-1949},
	pages = {435 - 489},
	abstract = {In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p ) 1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.},
	doi = {10.1002/bltj.1949.28.issue-310.1002/j.1538-7305.1949.tb03645.x},
	url = {http://doi.wiley.com/10.1002/bltj.1949.28.issue-3https://ieeexplore.ieee.org/document/6773080},
	author = {Shockley, W.}
}
