@article {Ehm2004,
	title = {Pressure-induced structural phase transition in the IV{\textendash}VI semiconductor SnS},
	journal = {Journal of Physics: Condensed Matter},
	volume = {16},
	year = {2004},
	month = {Feb-06-2004},
	pages = {3545 - 3554},
	abstract = {The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch{\textendash}Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) {\r A}3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B{\textquoteright}=5.5(2) for α-SnS and V0 = 160(1) {\r A}, B0 = 86.0(5) GPa and B{\textquoteright}=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1\%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone.},
	issn = {0953-8984},
	doi = {10.1088/0953-8984/16/21/004},
	url = {http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141},
	author = {Ehm, L and Knorr, K and Dera, P and Krimmel, A and Bouvier, P and Mezouar, M}
}
