@article {Avellaneda2008,
	title = {Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition},
	journal = {Journal of The Electrochemical Society},
	volume = {155},
	year = {2008},
	month = {Jan-01-2008},
	pages = {D517},
	abstract = {Polycrystalline thin films (100{\textendash}450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6{\texttimes}10-6 (Ωcm)-1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500{\textdegree}C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550{\textdegree}C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, \~{}1 (Ωcm)-1 . Photovoltaic effect in different structures involving these films is presented. },
	issn = {00134651},
	doi = {10.1149/1.2917198},
	url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198},
	author = {Avellaneda, David and Nair, M. T. S. and Nair, P. K.}
}
@article {Nair1993,
	title = {Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties},
	journal = {Journal of The Electrochemical Society},
	volume = {140},
	year = {1993},
	pages = {754{\textendash}759},
	abstract = {Chemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200{\textdegree}C} and remain stable up to {300{\textdegree}C.} But oxygen chemisorption reduces the photo- and dark conductivities of the films annealed at {300{\textdegree}C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220{\textdegree}C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {\~{}300{\textdegree}C.}},
	keywords = {annealing, bismuth compounds, copper compounds, optical properties, Thin films},
	issn = {0013-4651, 1945-7111},
	doi = {10.1149/1.2056153},
	url = {http://jes.ecsdl.org/content/140/3/754},
	author = {Nair, P. K. and Nair, M. T. S. and Pathirana, Hema M. K. K. and Zingaro, Ralph A. and Meyers, Edward A.}
}
