@article {Sun2016, title = {Over 9\% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer}, journal = {Advanced Energy Materials}, volume = {6}, year = {2016}, month = {Jan-06-2016}, pages = {1600046}, doi = {10.1002/aenm.201600046}, url = {http://doi.wiley.com/10.1002/aenm.201600046https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002\%2Faenm.201600046}, author = {Sun, Kaiwen and Yan, Chang and Liu, Fangyang and Huang, Jialiang and Zhou, Fangzhou and Stride, John A. and Martin A Green and Hao, Xiaojing} } @article {wang2014device, title = {Device characteristics of CZTSSe thin-film solar cells with 12.6\% efficiency}, journal = {Advanced Energy Materials}, volume = {4}, year = {2014}, author = {Wang, Wei and Winkler, Mark T and Oki Gunawan and Tayfun Gokmen and Todorov, Teodor K and Zhu, Yu and Mitzi, David B} } @article {Gokmen2013, title = {Band tailing and efficiency limitation in kesterite solar cells}, journal = {Applied Physics Letters}, volume = {103}, year = {2013}, pages = {103506}, doi = {10.1063/1.4820250}, url = {http://dx.doi.org/10.1063/1.4820250}, author = {Tayfun Gokmen and Oki Gunawan and Teodor K. Todorov and David B. Mitzi} } @conference {Bowden2013, title = {SPIE ProceedingsNon PN junction solar cells using carrier selective contacts}, booktitle = {SPIE OPTOPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II}, year = {2013}, publisher = {SPIE}, organization = {SPIE}, address = {San Francisco, California, USA}, doi = {10.1117/12.2004259}, url = {http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2004259}, author = {Bowden, Stuart and Ghosh, Kunal and Honsberg, Christiana} } @article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @article {puthussery2011, title = {Colloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {133}, year = {2011}, month = {Feb-02-2011}, pages = {716 - 719}, issn = {0002-7863}, doi = {10.1021/ja1096368}, url = {http://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja1096368}, author = {Puthussery, James and Seefeld, Sean and Berry, Nicholas and Gibbs, Markelle and Law, Matt} } @article {Liu2011, title = {Electronic structure of TiS2 and its electric transport properties under high pressure}, journal = {Journal of Applied Physics}, volume = {109}, year = {2011}, month = {Jan-01-2011}, pages = {053717}, issn = {00218979}, doi = {10.1063/1.3552299}, url = {http://link.aip.org/link/JAPIAU/v109/i5/p053717/s1\&Agg=doi}, author = {Liu, Bao and Yang, Jie and Han, Yonghao and Hu, Tingjing and Ren, Wanbin and Liu, Cailong and Ma, Yanzhang and Gao, Chunxiao} } @mastersthesis {Ghosh2011, title = {Heterojunction and Nanostructured Photovoltaic Device: Theory and Experiment}, year = {2011}, school = {Arizona State University}, type = {phdPh. D. Thesis}, abstract = {A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31\%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 \%). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.}, keywords = {a-Si/c-Si heterojunction, Alternative energy, Engineering, Nanostructure, Photovoltaics, Solar}, url = {http://hdl.handle.net/2286/R.I.14312}, author = {Ghosh, Kunal} } @article {Mitzi2011, title = {The path towards a high-performance solution-processed kesterite solar cell}, journal = {Solar Energy Materials and Solar Cells}, volume = {95}, year = {2011}, pages = {1421 - 1436}, abstract = {Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth{\textquoteright}s crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., \>10\% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8\%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7\%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.}, keywords = {Solution processing}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2010.11.028}, url = {http://www.sciencedirect.com/science/article/pii/S0927024810006719}, author = {David B. Mitzi and Oki Gunawan and Teodor K. Todorov and Kejia Wang and Supratik Guha} } @article {Green2010, title = {Solar cell efficiency tables (version 35)}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {18}, number = {2}, year = {2010}, note = {

Compendex

}, pages = {144{\textendash}150}, abstract = {

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

}, keywords = {Conversion efficiency, Energy conversion, solar cells, Solar energy, Solar power generation}, issn = {10627995}, url = {http://dx.doi.org/10.1002/pip.974}, author = {Martin A Green and Keith Emery and Yoshihiro Hishikawa and Wilhelm Warta} } @article {Raksa2009, title = {Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-07-2009}, pages = {4741 - 4744}, issn = {00406090}, doi = {10.1016/j.tsf.2009.03.027}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799}, author = {Raksa, Phathaitep and Nilphai, Sanpet and Gardchareon, Atcharawon and Choopun, Supab} } @article {chen2009crystal, title = {Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights}, journal = {Applied Physics Letters}, volume = {94}, year = {2009}, pages = {41903}, author = {Chen, Shiyou and Gong, XG and Walsh, Aron and Wei, Su-Huai} } @proceedings {Dimroth2009, title = {METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 \% EFFICIENCY}, year = {2009}, note = {
}, author = {F. Dimroth and W. Guter and J. Sch{\"o}ne and E. Welser and M. Steiner and E. Oliva and A. Wekkeli and G. Siefer and S.P. Philipps and A.W. Bett} } @article {Green2009, title = {The path to 25\% silicon solar cell efficiency: History of silicon cell evolution}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {17}, year = {2009}, note = {
}, pages = {183-189}, author = {Martin A Green} } @conference {Botero2009, title = {Study of SnS:Bi thin films prepared by sulfurization}, booktitle = {2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC)}, year = {2009}, publisher = {IEEE}, organization = {IEEE}, address = {Philadelphia, PA, USA}, isbn = {978-1-4244-2949-3}, doi = {10.1109/PVSC.2009.5411154}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5411154}, author = {Botero, M. and Bartolo Perez, P. and Calderon, C. and Romero, E. and Gordillo, G.} } @article {wadia2009, title = {Surfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals}, journal = {Chemistry of Materials}, volume = {21}, year = {2009}, month = {Feb-07-2010}, pages = {2568 - 2570}, issn = {0897-4756}, doi = {10.1021/cm901273v}, url = {http://pubs.acs.org/doi/abs/10.1021/cm901273vhttp://pubs.acs.org/doi/pdf/10.1021/cm901273v}, author = {Wadia, Cyrus and Wu, Yue and Gul, Sheraz and Volkman, Steven K. and Guo, Jinghua and Alivisatos, A. Paul} } @article {steinhagen2009synthesis, title = {Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, pages = {12554{\textendash}12555}, author = {Steinhagen, Chet and Panthani, Matthew G and Akhavan, Vahid and Goodfellow, Brian and Koo, Bonil and Korgel, Brian A} } @article {Guo2009, title = {Synthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, month = {Feb-08-2011}, pages = {11672 - 11673}, issn = {0002-7863}, doi = {10.1021/ja904981r}, url = {http://pubs.acs.org/doi/abs/10.1021/ja904981rhttp://pubs.acs.org/doi/pdf/10.1021/ja904981r}, author = {Guo, Qijie and Hillhouse, Hugh W. and Rakesh Agrawal} } @article {g2008, title = {REST2: High-performance solar radiation model for cloudless-sky irradiance, illuminance, and photosynthetically active radiation {\textendash} Validation with a benchmark dataset}, journal = {Solar Energy}, volume = {82}, year = {2008}, month = {Jan-03-2008}, pages = {272 - 285}, issn = {0038092X}, doi = {10.1016/j.solener.2007.04.008}, url = {https://linkinghub.elsevier.com/retrieve/pii/S0038092X07000990https://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/plain}, author = {Gueymard, Christian A.} } @article {green_self-consistent_2008, title = {Self-consistent optical parameters of intrinsic silicon at 300~K including temperature coefficients}, journal = {Solar Energy Materials and Solar Cells}, volume = {92}, year = {2008}, pages = {1305{\textendash}1310}, abstract = {An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300\&\#xa0;K} are tabulated over the 0.25{\textendash}1.45\&\#xa0;μm wavelength range at 0.01\&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers{\textendash}Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {-24\&\#xa0;{\textdegree}C} to {200\&\#xa0;{\textdegree}C} range.}, keywords = {Absorption coefficient, optical properties, SILICON SOLAR CELLS}, issn = {0927-0248}, doi = {10.1016/j.solmat.2008.06.009}, url = {http://www.sciencedirect.com/science/article/pii/S0927024808002158}, author = {Martin A Green} } @article {Wenham2007, title = {Applied Photovoltaics}, year = {2007}, note = {

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

}, pages = {317}, publisher = {Earthscan}, address = {London, UK}, abstract = {
}, isbn = {1-84407-401-3}, url = {http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8\&s=books\&qid=1279558328\&sr=8-1}, author = {Wenham, S.R. and Martin A Green and Watt, M. E. and R. Corkish} } @article {Park2007, title = {Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors}, journal = {Electrochemical and Solid-State Letters}, volume = {10}, year = {2007}, month = {Jan-01-2007}, pages = {H340}, issn = {10990062}, doi = {10.1149/1.2774683}, url = {http://esl.ecsdl.org/cgi/doi/10.1149/1.2774683}, author = {Park, Jeong-Woo and Baeg, Kang-Jun and Ghim, Jieun and Kang, Seok-Ju and Park, Jeong-Ho and Kim, Dong-Yu} } @article {Gumus2007, title = {Optical and structural properties of manganese sulfide thin films}, journal = {Optical Materials}, volume = {29}, year = {2007}, month = {Jan-05-2007}, pages = {1183 - 1187}, abstract = {Highly transparent crystalline manganese sulfide (γ-MnS) thin films were prepared on glass substrate by chemical bath deposition (CBD) method at room temperature (27 {\textdegree}C). The refractive index n(λ), extinction coefficient k(λ) and film thickness t are evaluated from spectrophotometric transmittance spectrum by using envelope method. The optical band gap of the film was estimated to be 3.88 eV. XRD measurements show that the MnS films are crystallized in the wurtzite phase and present a preferential orientation along the c-axis. The effect of trisodium citrate on crystalline films has been determined. The grain size of the film is estimated to be 29.8 nm using by the Scherrer{\textquoteright}s formula.}, issn = {09253467}, doi = {10.1016/j.optmat.2006.04.012}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0925346706001972}, author = {G{\"u}m{\"u}{\c s}, C. and Uluta{\c s}, C. and Ufuktepe, Y.} } @article {Pysch2007, title = {A review and comparison of different methods to determine the series resistance of solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {91}, year = {2007}, note = {
}, month = {11/2007}, pages = {1698 - 1706}, issn = {09270248}, doi = {10.1016/j.solmat.2007.05.026}, author = {PYSCH, D and A. Mette and Stefan W. Glunz} } @article {Devika2006, title = {Microstructure dependent physical properties of evaporated tin sulfide films}, journal = {Journal of Applied Physics}, volume = {100}, year = {2006}, month = {Jan-01-2006}, pages = {023518}, abstract = {In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275{\textdegree}C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of \~{}105cm-1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.}, issn = {00218979}, doi = {10.1063/1.2216790}, url = {http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790}, author = {Devika, M. and Ramakrishna Reddy, K. T. and Koteeswara Reddy, N. and Ramesh, K. and Ganesan, R. and Gopal, E. S. R. and Gunasekhar, K. R.} } @article {Caracas2005, title = {First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se}, journal = {Physics and Chemistry of Minerals}, volume = {32}, year = {2005}, month = {Jan-07-2005}, pages = {295 - 300}, abstract = {We determine the valence electron density and the electron band structure of stibnite, bismutinite, guanajuatite and antimonelite using the density functional theory. All the compounds present similar electronic properties and exhibit a quasi-1D character. We perform a detailed analysis of the charge topology, the atomic static charges and volumes.}, issn = {0342-1791}, doi = {10.1007/s00269-005-0470-y}, url = {http://rruff.geo.arizona.edu/AMS/authors/Caracas\%20R}, author = {Caracas, Razvan and Gonze, Xavier} } @article {Parhizkar2005, title = {Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers}, journal = {Colloids and Surfaces A: Physicochemical and Engineering Aspects}, volume = {257-258}, year = {2005}, month = {Jan-05-2005}, pages = {277 - 282}, issn = {09277757}, doi = {10.1016/j.colsurfa.2004.10.029}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320}, author = {Parhizkar, M. and Singh, Sukhvinder and Nayak, P.K. and Kumar, Nigvendra and Muthe, K.P. and Gupta, S.K. and Srinivasa, R.S. and Talwar, S.S. and Major, S.S.} } @article {Goetzberger2005, title = {Photovoltaic Solar Energy Generation}, year = {2005}, note = {

1. What is Photovoltaics?

2. Physics of Solar Cells

3. Silicon Solar Cell Material and Technology

4. Crystalline Thin-Film Silicon

5. Other Materials, New Concepts

6. Solar Cells and Solar Modules

7. PV Systems

8. PV Systems Installation Possibilities

9. Environmental Impacts by PV Systems

10. Efficinecy and Performance of PV Systems

11. PV Markets Support Measures and Costs

12. The Future PV

13. Other (Perhaps Competing) CO2-Free Energy Sources

14. Popular Killing Arguments Against PV

References

Index

}, pages = {232}, publisher = {Springer}, address = {Berlin, Germany}, isbn = {3-540-23676-7}, url = {http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books\&ie=UTF8\&qid=1279649098\&sr=1-2}, author = {Adolf Goetzberger and Volker Uwe Hoffmann} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Zhao2001, title = {24.5\% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates}, journal = {Solar Energy Materials and Solar Cells}, volume = {66}, year = {2001}, note = {
}, pages = {27 - 36}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00155-0}, author = {Zhao, J. and Aihua Wang and Martin A Green} } @article {Glunz2001, title = {Degradation of carrier lifetime in Cz silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, number = {1-4}, year = {2001}, note = {
}, pages = {219 - 229}, keywords = {Defects}, issn = {0927-0248}, doi = {DOI: 10.1016/S0927-0248(00)00098-2}, url = {http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f}, author = {Stefan W. Glunz and S. Rein and W. Warta and J. Knobloch and W. Wettling} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @article {rockett1999incorporation, title = {Na incorporation in Mo and CuInSe2 from production processes}, journal = {Solar energy materials and solar cells}, volume = {59}, year = {1999}, pages = {255{\textendash}264}, author = {Rockett, Angus and Granath, Karin and Asher, S and Al Jassim, MM and Hasoon, F and Matson, R and Basol, B and Kapur, V and Britt, JS and Gillespie, T and others} } @proceedings {Zhao1998, title = {19.8\% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface}, year = {1998}, note = {
}, address = {Vienna, Austria}, author = {Zhao, J. and Wang, A. and Martin A Green} } @article {Zhao1991, title = {19.8\% efficient \"honeycomb\" textured multicrystalline and 24.4\% monocrystalline silicon solar cells}, journal = {Applied Physics Letters}, volume = {73}, number = {14}, year = {1998}, pages = {1991-1993}, publisher = {AIP}, keywords = {elemental semiconductors, SILICON, solar cells, surface texture}, doi = {10.1063/1.122345}, url = {http://link.aip.org/link/?APL/73/1991/1}, author = {Jianhua Zhao and Aihua Wang and Martin A Green and Francesca Ferrazza} } @article {Lokhande1998, title = {Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films}, journal = {Thin Solid Films}, volume = {330}, year = {1998}, month = {Jan-09-1998}, pages = {70 - 75}, issn = {00406090}, doi = {10.1016/S0040-6090(98)00500-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008}, author = {Lokhande, C.D. and Ennaoui, A. and Patil, P.S. and Giersig, M. and Muller, M. and Diesner, K. and Tributsch, H.} } @article {Zhao1997, title = {20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {269{\textendash}276}, author = {Zhao, J. and Wang, A. and Yun, F. and Zhang, G. and Roche, D.M. and Wenham, S.R. and Martin A Green} } @article {Green1995, title = {Optical properties of intrinsic silicon at 300 K}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {3}, year = {1995}, note = {
}, month = {1995}, pages = {189 - 192}, issn = {1099159X}, doi = {10.1002/pip.4670030303}, author = {Martin A Green and Keevers, Mark J.} } @book {gueymard1995, title = {SMARTS2: a simple model of the atmospheric radiative transfer of sunshine: algorithms and performance assessment}, year = {1995}, publisher = {Florida Solar Energy Center Cocoa, FL}, organization = {Florida Solar Energy Center Cocoa, FL}, author = {Gueymard, Christian} } @article {Robinson1994, title = {Departures from the principle of superposition in silicon solar cells}, journal = {Journal of Applied Physics}, volume = {76}, year = {1994}, note = {
}, month = {1994}, pages = {7920}, issn = {00218979}, doi = {10.1063/1.357902}, author = {Robinson, S. J. and Armin G Aberle and Martin A Green} } @conference {Pu1994, title = {Investigation on SnS film by RF sputtering for photovoltaic application}, booktitle = {1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)}, year = {1994}, publisher = {IEEE}, organization = {IEEE}, address = {Waikoloa, HI, USA}, doi = {10.1109/WCPEC.1994.519977}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977}, author = {Wei Guang-Pu and Zhang Zhi-Lin and Zhao Wei-Ming and Gao Xiang-Hong and Chen Wei-Qun and Tanamura, H. and Yamaguchi, M. and Noguchi, H. and Nagatomo, T. and Omoto, O.} } @book {Ghandi1994, title = {{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition}, year = {1994}, publisher = {Wiley-Interscience}, organization = {Wiley-Interscience}, edition = {2}, isbn = {0471580058}, author = {Ghandhi, Sorab K.} } @conference {Aberle1993, title = {A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells}, booktitle = {Proceedings of the 23rd IEEE Photovoltaic Specialists Conference}, year = {1993}, address = {Louisville, KY}, author = {Armin G Aberle and Wenham, S.R. and Martin A Green} } @book {Green1992, title = {Solar Cells - Operating Principles, Technology and System Application}, year = {1992}, note = {
}, publisher = {University of NSW}, organization = {University of NSW}, address = {Kensington, Australia}, author = {Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, number = {2}, year = {1991}, note = {
}, pages = {846-854}, publisher = {AIP}, keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE}, doi = {10.1063/1.349645}, url = {http://link.aip.org/link/?JAP/70/846/1}, author = {A. B. Sproul and Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, year = {1991}, note = {
}, month = {1991}, pages = {846}, issn = {00218979}, doi = {10.1063/1.349645}, author = {A. B. Sproul and Martin A Green} } @proceedings {Zhao1991, title = {Improvements in Silicon Solar Cell Performance}, year = {1991}, note = {
}, pages = {399-402}, author = {Zhao, J. and Wang A. and Dai, X. and Martin A Green and Wenham, S.R.} } @book {Blakers1991, title = {The Role of Photovoltaics in Reducing Greenhouse Gas Emissions}, year = {1991}, note = {
}, publisher = {Australian Government Publishing Service}, organization = {Australian Government Publishing Service}, address = {Canberra}, author = {Andrew W Blakers and Martin A Green and T. Leo and H. Outhred and B. Robins} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Sproul1990, title = {Improved value for the silicon intrinsic carrier concentration at 300 K}, journal = {Applied Physics Letters}, volume = {57}, year = {1990}, note = {
}, month = {1990}, pages = {255}, issn = {00036951}, doi = {10.1063/1.103707}, author = {A. B. Sproul and Martin A Green and Zhao, J.} } @proceedings {Green1990, title = {Photovoltaics: Coming of Age}, year = {1990}, note = {
}, month = {05/1990}, pages = {1-8}, address = {Orlando, USA}, abstract = {The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40\% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.}, doi = {10.1109/PVSC.1990.111582}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582}, author = {Martin A Green} } @article {Zolper1989, title = {16.7\% efficient, laser textured, buried contact polycrystalline silicon solar cell}, journal = {Applied Physics Letters}, volume = {55}, number = {22}, year = {1989}, pages = {2363}, issn = {00036951}, doi = {10.1063/1.102019}, url = {http://apl.aip.org/applab/v55/i22/p2363_s1}, author = {John C. Zolper and Srinivasamohan Narayanan and Stuart R. Wenham and Martin A Green} } @booklet {Wenham1988, title = {Buried contact solar cell}, number = {4726850}, year = {1988}, note = {
}, month = {February}, url = {http://www.freepatentsonline.com/4726850.html}, author = {Stuart R. Wenham and Martin A Green} } @article {Campbell1987, title = {Light trapping properties of pyramidally textured surfaces}, journal = {Journal of Applied Physics}, volume = {62}, year = {1987}, month = {Jan-01-1987}, pages = {243}, issn = {00218979}, doi = {10.1063/1.339189}, author = {Campbell, Patrick and Martin A Green} } @article {Green1982, title = {Accuracy of Analytical Expressions for Solar Cell Fill Factors}, journal = {Solar Cells}, volume = {7}, year = {1982}, note = {
}, pages = {337-340}, author = {Martin A Green} } @article {Green1982book, title = {Solar Cells: Operating Principles, Technology and System Applications}, year = {1982}, note = {

1. Solar Cells and Sunlight

2. Review of Semiconductor Properties

3. Generation, Recombination and the Basic Equation of Device Physics

4. p-n Junction Diodes

5. Efficiency Limits, Losses and Measurement

6. Standard Silicon Solar Cell Technology

7. Improved Silicon Cell Technology

8. Design of Silicon Solar Cells

9. Other Device Structures

10. Other Semiconductor Materials

11.Concentrating Systems

12. Photovoltaic Systems: Components and Applications

13. Design of Stand-alone Systems

14. Residential and Centralised Photovoltaic Power Systems

Appendix A: Physical Constants

Appendix B: Selected Properties of Silicon

Appendix C: List of Symbols

}, pages = {274}, publisher = {Prentice-Hall}, abstract = {
}, isbn = {0-85823-580-3}, author = {Martin A Green} } @article {Green1981, title = {Solar cell fill factors: General graph and empirical expressions}, journal = {Solid-State Electronics}, volume = {24}, year = {1981}, note = {
}, pages = {788 - 789}, issn = {00381101}, doi = {10.1016/0038-1101(81)90062-9}, author = {Martin A Green} } @article {Logothetis1979, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, pages = {L521}, abstract = {A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007}, author = {E M Logothetis and W J Kaiser and C A Kukkonen and S P Faile and R Colella and J Gambold} } @article {Logothetis1979a, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, month = {Feb-07-1980}, pages = {L521 - L526}, issn = {0022-3719}, doi = {10.1088/0022-3719/12/13/007}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7}, author = {Logothetis, E M and W J Kaiser and Kukkonen, C A and S P Faile and Colella, R and J Gambold} } @article {Green1974, title = {Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion{\textemdash}I. Theory}, journal = {Solid-State Electronics}, volume = {17}, year = {1974}, month = {Jan-06-1974}, pages = {551 - 561}, abstract = {If the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (\<60 {\r A} for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (\<30 {\r A}), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the {\textquotedblleft}ideal diode{\textquotedblright} law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects.}, issn = {00381101}, doi = {10.1016/0038-1101(74)90172-5}, url = {http://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain}, author = {Green, M.A. and King, F.D. and Shewchun, J.} } @article {Grondahl1933, title = {The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell}, journal = {Review of Modern Physics}, volume = {5}, year = {1933}, note = {
}, pages = {141}, author = {Grondahl, L.O.} }