@article {feurer2017progress, title = {Progress in thin film CIGS photovoltaics{\textendash}Research and development, manufacturing, and applications}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {25}, year = {2017}, pages = {645{\textendash}667}, author = {Feurer, Thomas and Reinhard, Patrick and Avancini, Enrico and Bissig, Benjamin and L{\"o}ckinger, Johannes and Fuchs, Peter and Carron, Romain and Weiss, Thomas Paul and Perrenoud, Julian and Stutterheim, Stephan and Buecheler, Stephan and Tiwari, Ayodhya N.} } @article {Fonash2009, title = {Solar Cell Device Physics}, year = {2010}, note = {

1. Introduction

2. Material Properties and Device Physics Basic to Photovoltaics

3. Structures, Materials, and Scale

4. Homojunction Solar Cells

5. Semiconductor-semiconductor Heterojunction Solar Cells

6. Surface-barrier Solar Cells

7. Dye-sensitized Solar Cells

Appendicies

}, pages = {400}, publisher = {Academic Press}, edition = {Second Edition}, isbn = {978-0-12-374774-7}, url = {http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books\&ie=UTF8\&qid=1279652144\&sr=1-1}, author = {Stephen J. Fonash} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Zhao1991, title = {19.8\% efficient \"honeycomb\" textured multicrystalline and 24.4\% monocrystalline silicon solar cells}, journal = {Applied Physics Letters}, volume = {73}, number = {14}, year = {1998}, pages = {1991-1993}, publisher = {AIP}, keywords = {elemental semiconductors, SILICON, solar cells, surface texture}, doi = {10.1063/1.122345}, url = {http://link.aip.org/link/?APL/73/1991/1}, author = {Jianhua Zhao and Aihua Wang and Martin A Green and Francesca Ferrazza} } @conference {friedlmeier1997heterojunctions, title = {Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films}, booktitle = {14th European PVSEC}, year = {1997}, author = {Friedlmeier, Th Magorian and Wieser, N and Walter, Th and Dittrich, H and Schock, HW} } @proceedings {Fukui1997, title = {Surface texturing using reactive ion etching for multicrystalline silicon solar cells}, year = {1997}, note = {
}, pages = {1451, 47-50}, address = {New York, NY, USA}, author = {Fukui, K. and Inomata, Y. and Shirasawa, K.} } @article {heras1994, title = {Temperature dependence of the optical absorption edge of pyrite FeS 2 thin films}, journal = {Journal of Physics: Condensed Matter}, volume = {6}, year = {1994}, month = {Feb-11-1995}, pages = {10177 - 10183}, issn = {0953-8984}, doi = {10.1088/0953-8984/6/46/033}, url = {http://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd35}, author = {Heras, C de las and Ferrer, I J and Sanchez, C} } @book {Feynman1985, title = {QED : The Strange Theory of Light and Matter}, series = {Princeton University Press, Princeton NJ}, year = {1985}, note = {
}, author = {Feynman, R. P.} } @article {Hu1983-2, title = {On Phosphorus Diffusion in Silicon}, journal = {On Phosphorus Diffusion in Silicon}, volume = {54}, year = {1983}, note = {
}, pages = {6912-6922}, author = {S.M. Hu and P. Fahey and P. Sutton} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Lindholm1979, title = {Application of the superposition principle to solar-cell analysis}, journal = {IEEE Transactions on Electron Devices}, volume = {26}, number = {3}, year = {1979}, pages = {165{\textendash}171}, abstract = {The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).}, issn = {0018-9383}, author = {F.A. Lindholm and Fossum, J.G. and E.L. Burgess} } @article {Logothetis1979, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, pages = {L521}, abstract = {A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007}, author = {E M Logothetis and W J Kaiser and C A Kukkonen and S P Faile and R Colella and J Gambold} } @article {Logothetis1979a, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, month = {Feb-07-1980}, pages = {L521 - L526}, issn = {0022-3719}, doi = {10.1088/0022-3719/12/13/007}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7}, author = {Logothetis, E M and W J Kaiser and Kukkonen, C A and S P Faile and Colella, R and J Gambold} } @article {Fossum1977, title = {Physical operation of back-surface-field silicon solar cells}, journal = {IEEE Transactions on Electron Devices}, volume = {24}, number = {4}, year = {1977}, month = {04/1977}, pages = {322 - 325}, abstract = {

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

}, issn = {0018-9383}, author = {Fossum, J.G.} } @article {Vazquez1968, title = {Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn}, journal = {Physical Review}, volume = {176}, year = {1968}, month = {Jan-12-1968}, pages = {905 - 908}, issn = {0031-899X}, doi = {10.1103/PhysRev.176.905}, url = {http://link.aps.org/doi/10.1103/PhysRev.176.905}, author = {Vazquez, F. and Forman, Richard and Cardona, Manuel} } @article {Furuseth1965, title = {On the Properties of alpha-MnS and MnS2.}, journal = {Acta Chemica Scandinavica}, volume = {19}, year = {1965}, month = {Jan-01-1965}, pages = {1405 - 1410}, issn = {0904-213X}, doi = {10.3891/acta.chem.scand.19-1405}, url = {http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405}, author = {Furuseth, Sigrid and Kjekshus, Arne and Niklasson, Rune J. V. and Brunvoll, J. and Hinton, Merv} } @article {Chapin1954, title = {A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power}, journal = {Journal of Applied Physics}, volume = {25}, year = {1954}, note = {
}, pages = {676-677}, author = {Chapin, D.M. and Fuller, C.S. and Pearson, G.L.} } @article {Fritts1883, title = {On a New Form of Selenium Photocell}, journal = {American J. of Science}, volume = {26}, year = {1883}, note = {
}, pages = {465}, author = {Fritts, C.E.} }